Anyang, South Korea, June, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released its latest 550W, CW GaN SiC power transistor operating at 1.295 GHz to 1.305 GHz (IE13550D). This transistor is designed for CO2 lasers, particle accelerator, plasma, radiation oncology, LINAC, and so much more. The IE13550D achieves an exceptional drain efficiency of 80%, a power gain of 15dB with lower power dissipation. This device is internally matched and has a compact size of 20.6 x 9.8 x 3.77 mm. This compact device provides excellent thermal stability and reliability resulting in longer meantime and exceptional performance.

RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-megawatts of power.

To learn more, visit our website or contact one of our sales representatives today at


RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia.  RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.

Media Contacts:
Grace Cho