Anyang, South Korea, April 17, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, featured its 6kW, GaN Solid-State Microwave Generator in Microwave Journal’s April Product feature. The microwave generator operates at 2.4 to 2.5 GHz. It is designed for industrial, scientific, and medical (ISM) applications, such as CVD reactors for artificial diamond growth, PVD thin film deposition equipment for semiconductor films, and drying/sterilization for industrial food processing.
Using GaN power amplifiers (PA), the compact and lightweight RIU256K0-40T generator operates from 2.4 to 2.5 GHz, combining four, 1.6 kW GaN PAs into a stand-alone, rack-mounted solid-state power amplifier (SSPA) that is modular and fault-tolerant. The SSPA supports both CW and pulse operations and can be customized to application requirements.
With an adjustable power range from five to 100 percent of rated output, the RIU256K0-40T utilizes RFHIC’s technology enabling high system efficiency at both low and high power levels.
Each of the four GaN PAs in the generator uses RFHIC’s high-performance GaN on SiC transistor technology, which provides wide bandwidth, high efficiency, high breakdown voltage, and reduces the overall size of the system. The RIU256K0-40T uses 200W transistors (IE24200P), which have a saturated output power of 230W and 74 percent drain efficiency at 50 V bias.
The fully matched transistors are integrated with DC blocking capacitors on both RF ports to simplify SSPA integration.