Anyang, South Korea, January 15, 2019 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, will present on its latest GaN on Diamond HEMT production research at the Diamond D-Day Conference in Bristol, January 29th.
Diamond D-Day is a one-day workshop dedicated to the latest developments on GaN on Diamond materials and devices, the next generation of GaN for ultra-high-power RF uses, as well as their applications.
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
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