RFHIC Corporation was founded by Dr. Samuel Cho (Co-Founder & CTO) and David Cho (Co-Founder & CEO) in 1999 to address the needs of high performing, efficient, and cost-effective RF & Microwave Components for the South Korean Market. Now RFHIC Corporation is a global leader in providing radio frequency (RF) & microwave solutions utilizing Gallium Nitride (GaN) for various applications in wireless infrastructure, commercial and military radar, and industrial/scientific/medical (ISM) industries. RFHIC is a one-stop GaN solutions provider offering customers standard and custom design solutions from device to sub-system level within our production facility, enabling faster lead times and allowing our customers to get their products to market faster. Our in-house class 4 cleanroom production facility offers die attach, wire bonding, packaging, chip on board, hybrid, SMT line, RF test line, and quality control action capabilities. RFHIC Corporation is ISO9001 and 14001 certified, providing reliable & high-quality products. Our products are Restriction of Hazardous Substances Directive (RoHS) and Lead (Pb)-Free compliant.


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What We Believe

Through consistent Research and Development, RFHIC maintains to be a globally renowned Compound Semiconductor Company by harnessing the power of GaN Technology. RFHIC combines both innovation and creativity throughout all aspects of our business, from research and product development to packaging and marketing.

RFHIC has an unwavering commitment to Excellence and Quality. By providing every one of our customers with exceptional and innovative products delivered by our prestige GaN Solutions. 

RFHIC always looks for ways to identify and harness the strengths of our talented employees. Through consistent and continuous learning, leadership is encouraged and expected among all our employees. 

The fundamental building blocks of RFHIC is built upon the Core Value of Persistence. Through continuous R&D, we strive to grow as a Global Compound Semiconductor company by providing Reliable and Efficient GaN solutions.