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Description
RFHIC’s RWP2060050-48 is a 65W gallium-nitride (GaN) Wideband Power Amplifier designed for EW applications. Operable at 2 to 6 GHz and is 50 Ohms fully matched for easy design integration. ...
Frequency2,000 ~ 6,000MHzOutput Power65.0WEfficiency25%Freq. (MHz)2,000 ~ 6,000 -
Description
RFHIC’s HR2730-10A is a 15W, S-band, gallium-nitride (GaN) Front-End Module (FEM) designed for next-generation digital beamforming phased array radar applications. The HR2730-10A provides a 10% duty cycle and pulse width ...
Frequency2,700 ~ 3,000MHzEfficiency45%Freq. (MHz)2,700 ~ 3,000 -
Description
RFHIC’s RRP27371K5-30 is a 1.5kW, gallium-nitride (GaN) solid-state pulsed power amplifier operating at 2700 to 3700 MHz. This gallium-nitride (GaN) SSPA provides an ultra wide bandwidth of 1000 MHz with ...
Frequency2,700 ~ 3,700MHzOutput Power1,500.0WGain31dBEfficiency37%StatusSample availableFreq. (MHz)2,700 ~ 3,700
Gain (dB)31 -
Description
RFHIC’s RRP52591K2-42 is an ultra-wide-band, pulsed gallium-nitride (GaN) solid-state power amplifier designed for weather, maritime, and surveillance radar transmitters. The RRP52591K2-42 provides 1,260W of pulsed power operating at 5200 to ...
Frequency5,200 ~ 5,900MHzOutput Power1,260.0WGain42dBEfficiency35%Freq. (MHz)5,200 ~ 5,900
Gain (dB)42 -
Description
RFHIC’s RNP58200-C2 is a 200W gallium-nitride (GaN) Solid-State Power Amplifier (SSPA) designed ideally for industrial, medical, and scientific applications. Operable at 5725-5875 MHz fabricated with our gallium-nitride gallium-nitride (GaN) on ...
Frequency5,725 ~ 5,875MHzOutput Power53.0WGain30dBEfficiency31%Freq. (MHz)5,725 ~ 5,875
Gain (dB)30 -
Description
RFHIC’s RRM9397200-56A is a 200W, gallium-nitride (GaN) Pulse Amplifier Module designed ideally for weather and maritime radar applications. Operable at 9300 to 9700 MHz (X-band) and is 50 Ohms fully ...
Frequency9,300 ~ 9,700MHzOutput Power200.0WFreq. (MHz)9,300 ~ 9,700 -
Description
RFHIC’s RRM8894010-MID is a 10W, X Band gallium-nitride (GaN) transmit and receive Module designed ideally for next-generation active electronically scanned array radar systems. Operable at 8.8 to 9.4 GHz, (X-band) ...
Frequency8,800 ~ 9,400MHzOutput Power10.0WFreq. (MHz)8,800 ~ 9,400 -
Description
RFHIC’s RRP9397400-56A is a 400W, X-band, Pulse gallium-nitride (GaN) solid-state power amplifier designed for naval, surveillance, air traffic control, and weather radar system applications. The RRP9397400-56A is operable from 9.3 ...
Frequency9,300 ~ 9,700MHzOutput Power400.0WFreq. (MHz)9,300 ~ 9,700 -
Description
RFHIC’s HR3135-10A is a fully integrated 10W, S-band gallium-nitride (GaN) transmit and receive module designed for next-generation commercial and defense phased array radar systems. The HR3135-10A has a pulse width ...
Frequency3,100 ~ 3,500MHzEfficiency45%Freq. (MHz)3,100 ~ 3,500 -
Description
RFHIC’s RRP27311K0-24 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP27311K0-24 operates at 2700 to 3100 MHz (S-band), with pulsed output powers ...
Frequency2,700 ~ 3,100MHzOutput Power1,000.0WEfficiency45%Freq. (MHz)2,700 ~ 3,100 -
Description
RFHIC’s RRP5259600-39 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP5259600-39 operates at 5200 to 5900 MHz (C-band), with pulsed output powers ...
Frequency5,200 ~ 5,900MHzOutput Power600.0WGain39dBEfficiency33%Freq. (MHz)5,200 ~ 5,900
Gain (dB)39 -
Description
RFHIC’s RRP54592K4-24 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP54592K4-24 operates at 5400 to 5900 MHz (C-band), with pulsed output powers ...
Frequency5,400 ~ 5,900MHzOutput Power2,400.0WGain24dBEfficiency30%Freq. (MHz)5,400 ~ 5,900
Gain (dB)24 -
Description
RFHIC’s RRM090100250-54A is a pulsed, X-band solid-state power amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRM090100250-54A operates at 9000 to 10,000 MHz (X-band), with pulsed ...
Frequency9,000 ~ 10,000MHzOutput Power250.0WGain54dBFreq. (MHz)9,000 ~ 10,000
Gain (dB)54 -
Description
RFHIC’s RRT56575K0-67 is a 5kW, C-band (5600-5700 GHz) gallium-nitride (GaN) Solid-State transmitter designed for high power weather radar applications. The RRT56575K0-67 is built using RFHIC’s cutting-edge gallium-nitride gallium-nitride (GaN) on ...
Frequency5,600 ~ 5,700MHzOutput Power5,000.0WGain67dBEfficiency31%Freq. (MHz)5,600 ~ 5,700
Gain (dB)67 -
Description
RFHIC’s RWP2060080-50 is a 100W, gallium-nitride (GaN) Wideband Power amplifier designed for various electronic warfare applications. This gallium-nitride (GaN) wideband amplifier operates from 2000 to 6000 MHz and offers high ...
Frequency2,000 ~ 6,000MHzOutput Power100.0WEfficiency22%Freq. (MHz)2,000 ~ 6,000
Pout (W)100 -
Description
RFHIC’s RRT54594K0-66 is a 4kW, C-Band, gallium-nitride (GaN) solid-state transmitter designed for high resolution maritime, defense, and weather radar applications. The RRT54594K0-66 delivers flexible duty cycle ranges from 1% to ...
Frequency5,400 ~ 5,900MHzOutput Power4,000.0WGain66dBEfficiency26%Freq. (MHz)5,400 ~ 5,900
Gain (dB)66 -
Description
RFHIC’s RRT901005K0-57 is a 5kW, X-Band, gallium-nitride (GaN) solid-state transmitter designed for high-power applications such as maritime, surveillance, and weather radar. The RRT901005K0-57 delivers flexible duty cycle ranges from 1% ...
Frequency9,000 ~ 10,000MHzOutput Power5,000.0WGain57dBEfficiency25%Freq. (MHz)9,000 ~ 10,000
Gain (dB)57 -
Description
RFHIC’s RRT9397400-560 is a 400W, X-band Solid-State Transmitter designed for high power radar and weather radar applications. The RRT9397400-560 provides a compact size of 19″(w) by 2U allowing users to ...
Frequency9,300 ~ 9,700MHzOutput Power400.0WGain56dBEfficiency25%Freq. (MHz)9,300 ~ 9,700
Gain (dB)56 -
Description
RFHIC’s ETQ2014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V ...
Frequency0 ~ 6,000MHzOutput Power3.2WGain19dBEfficiency60%Freq. (MHz)0 ~ 6,000
Pout (W)3
Gain (dB)19 -
Description
RFHIC’s DT12060P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V ...
Frequency0 ~ 6,000MHzOutput Power14.1WGain17dBEfficiency70%Freq. (MHz)0 ~ 6,000
Pout (W)14
Gain (dB)17 -
Description
RFHIC”s WL2215-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2215-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzGain15dBFreq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
The 580W CW RF Power Transistor is designed for particle accelerator and microwave energy applications at 500MHz. This device is suitable for use in CW, pulse and linear applications. This ...
Frequency499 ~ 501MHzOutput Power580.0WEfficiency75%Freq. (MHz)499 ~ 501 -
Description
RFHIC”s WL2208-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2208-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzGain15dBFreq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
RFHIC”s WL1008-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1008-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzGain16dBFreq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WL1015-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1015-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzGain16dBFreq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WLP0640 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 20 to 520 MHz, the WLP0640 yields a high gain of 19.5 with ...
Frequency20 ~ 520MHzGain20dBFreq. (MHz)20 ~ 520
Gain (dB)20 -
Description
RFHIC”s WL2205-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 30 to 2200 MHz the WL2205-L yields a high gain of 15.5 with ...
Frequency30 ~ 2,200MHzGain16dBFreq. (MHz)30 ~ 2,200
Gain (dB)16 -
Description
RFHIC”s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with ...
Frequency1 ~ 520MHzGain23dBFreq. (MHz)1 ~ 520
Gain (dB)23 -
Description
The RSP4459030-17A is designed for Communication system application frequencies from 4.4 ~ 5.9 GHz. This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and ...
Frequency4,400 ~ 5,900MHzGain13dBFreq. (MHz)4,400 ~ 5,900
Gain (dB)13 -
Description
RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 ...
Frequency30 ~ 1,000MHzOutput Power0.3WGain18dBFreq. (MHz)30 ~ 1,000
Gain (dB)18 -
Description
RFHIC’s LCL3322-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 2700 to 3800 MHz, the LCL3322-L provides 21dB of gain and P1dB of 27dBm, while supporting ...
Frequency2,700 ~ 3,800MHzGain21dBFreq. (MHz)2,700 ~ 3,800
Gain (dB)21 -
Description
RFHIC’s CL2102D-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1750 to 2600 MHz, the CL2102D-L provides 14.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,750 ~ 2,600MHzGain15dBFreq. (MHz)1,750 ~ 2,600
Gain (dB)15 -
Description
RFHIC’s CL1302D-L is an L-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 1200 to 1400 MHz, the CL1302D-L provides 18dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,200 ~ 1,400MHzGain18dBFreq. (MHz)1,200 ~ 1,400
Gain (dB)18 -
Description
RFHIC’s CL3102D-L is an S-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 2700 to 3500 MHz, the CL3102D-L provides 11.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency2,700 ~ 3,500MHzGain12dBFreq. (MHz)2,700 ~ 3,500
Gain (dB)12