All Products

RFHIC offers unmatched GaN HEMT components that deliver superior performance than that of any other technology, for a variety of applications. Take a look, and see our wide-range of reliable, efficient, and linear products only from RFHIC.

  • WL0510

    Low Noise Amplifiers

    WL0510

    Description

    RFHIC”s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with ...

    Frequency
    1 ~ 520MHz
    Output Power
    W
    Gain
    23dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)1 ~ 520
    Gain (dB)23
  • Description

    The RSP4459030-17A is designed for Communication system application frequencies from 4.4 ~ 5.9 GHz. This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and ...

    Frequency
    4,400 ~ 5,900MHz
    Gain
    13dB
    StatusProduction
    Freq. (MHz)4,400 ~ 5,900
    Gain (dB)13
  • Description

    RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a ...

    Frequency
    20 ~ 520MHz
    Output Power
    40.0W
    Gain
    42dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 520
    Gain (dB)42
  • Description

    RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a ...

    Frequency
    20 ~ 512MHz
    Output Power
    40.0W
    Gain
    44dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 512
    Gain (dB)44
  • Description

    RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 ...

    Frequency
    30 ~ 1,000MHz
    Output Power
    0.3W
    Gain
    18dB
    StatusProduction
    Freq. (MHz)30 ~ 1,000
    Gain (dB)18
  • LCL3322-L

    Low Noise Amplifiers

    LCL3322-L

    Description

    RFHIC’s LCL3322-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 2700 to 3800 MHz, the LCL3322-L provides 21dB of gain and P1dB of 27dBm, while supporting ...

    Frequency
    2,700 ~ 3,800MHz
    Output Power
    W
    Gain
    21dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)2,700 ~ 3,800
    Gain (dB)21
  • CL2102D-L

    Low Noise Amplifiers

    CL2102D-L

    Description

    RFHIC’s CL2102D-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1750 to 2600 MHz, the CL2102D-L provides 14.5dB of gain and P1dB of 20dBm, while supporting ...

    Frequency
    1,750 ~ 2,600MHz
    Output Power
    W
    Gain
    15dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)1,750 ~ 2,600
    Gain (dB)15
  • CL1302D-L

    Low Noise Amplifiers

    CL1302D-L

    Description

    RFHIC’s CL1302D-L is an L-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 1200 to 1400 MHz, the CL1302D-L provides 18dB of gain and P1dB of 20dBm, while supporting ...

    Frequency
    1,200 ~ 1,400MHz
    Output Power
    W
    Gain
    18dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)1,200 ~ 1,400
    Gain (dB)18
  • CL3102D-L

    Low Noise Amplifiers

    CL3102D-L

    Description

    RFHIC’s CL3102D-L is an S-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 2700 to 3500 MHz, the CL3102D-L provides 11.5dB of gain and P1dB of 20dBm, while supporting ...

    Frequency
    2,700 ~ 3,500MHz
    Output Power
    W
    Gain
    12dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)2,700 ~ 3,500
    Gain (dB)12
  • Description

    RFHIC’s RRM9395200-56 is a 200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 9300 to 9500 MHz, the RRM9395200-56 achieves 56 dB of gain with an ...

    Frequency
    9,300 ~ 9,500MHz
    Output Power
    200.0W
    Gain
    56dB
    Efficiency
    20%
    StatusProduction
    Freq. (MHz)9,300 ~ 9,500
    Gain (dB)56
  • Description

    RFHIC’s RRP54591K3-43 is a C-band, gallium-nitride (GaN) Pulse amplifier designed for Radar system applications. The RRP54591K3-43 is operable from 5.4 to 5.9 GHz and has an output pulse power of ...

    Frequency
    5,400 ~ 5,899MHz
    Output Power
    1,200.0W
    Gain
    43dB
    Efficiency
    35%
    StatusSample available
    Freq. (MHz)5,400 ~ 5,899
    Gain (dB)43
  • Description

    RFHIC’s RWP03160-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a ...

    Frequency
    20 ~ 500MHz
    Output Power
    159.0W
    Gain
    43dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 500
    Gain (dB)43
  • Description

    RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.

    ...
    Frequency
    20 ~ 512MHz
    Output Power
    20.0W
    Gain
    41dB
    Efficiency
    %
    StatusSample available
    Freq. (MHz)20 ~ 512
    Gain (dB)41
  • Description

    RFHIC’s RIM251K6-20 is a 1.6kW, gallium-nitride (GaN) solid-state module amplifier (SSPA) which operates from 2400 to 2500 MHz. It has an amplifier efficiency of 55% and is capable of both ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    1,600.0W
    Gain
    60dB
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)60
  • Description

    RFHIC’s RNP24550-21 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 55% and is capable of both CW ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    550.0W
    Gain
    43dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)43
  • Description

    RFHIC’s RFM245-10 is a 100 W, RF CW gallium-nitride (GaN) solid-state power amplifier (SSPA)generator ideally designed for medical equipment applications. It has a drain efficiency of 37% and is capable ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Efficiency
    37%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
  • Description

    RFHIC’s RYP24200-20S is a 200 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    Gain
    28dB
    Efficiency
    68%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)28
  • Description

    RFHIC’s RCP25400-20L is a 400 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 63% and is capable of both CW ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    400.0W
    Gain
    13dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)13
  • Description

    RFHIC’s RIM091K1-20 is a 1kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...

    Frequency
    900 ~ 930MHz
    Output Power
    1,100.0W
    Gain
    50dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)50
  • Description

    RFHIC’s RIM091K5-20 is a 1.5kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...

    Frequency
    900 ~ 930MHz
    Output Power
    1,500.0W
    Gain
    50dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)50
  • IE24300P

    GaN on SiC Transistors

    IE24300P

    Description

    RFHIC’s IE24300P is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    300.0W
    Gain
    11dB
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)11
  • Description

    RFHIC’s RNP09550-20 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW ...

    Frequency
    910 ~ 920MHz
    Output Power
    550.0W
    Gain
    60dB
    Efficiency
    66%
    StatusSample available
    Freq. (MHz)910 ~ 920
    Gain (dB)60
  • IE24150P

    GaN on SiC Transistors

    IE24150P

    Description

    RFHIC’s IE24150P is a 150W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    150.0W
    Gain
    13dB
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)13
  • IE24200P

    GaN on SiC Transistors

    IE24200P

    Description

    RFHIC’s IE24200P is a 200W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
  • IE13550D

    GaN on SiC Transistors

    IE13550D

    Description

    RFHIC’s IE13550D is a 550W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    550.0W
    Gain
    15dB
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)15
  • IE24100P

    GaN on SiC Transistors

    IE24100P

    Description

    RFHIC’s IE24100P is a 100W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor fabricated with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology. Operating from 2400 to 2500 MHz, ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)15
  • IE09150PC

    GaN on SiC Transistors

    IE09150PC

    Description

    RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an ...

    Frequency
    900 ~ 930MHz
    Output Power
    150.0W
    Gain
    18dB
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • IE09300PC

    GaN on SiC Transistors

    IE09300PC

    Description

    RFHIC’s IE09300PC is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the ...

    Frequency
    900 ~ 930MHz
    Output Power
    300.0W
    Gain
    18dB
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • ET43028P

    GaN on SiC Transistors

    ET43028P

    Description

    RFHIC’s ET43028P is a 34W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    34.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)15
  • ET43055P

    GaN on SiC Transistors

    ET43055P

    Description

    RFHIC’s ET43055P is a 70W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    70.0W
    Gain
    13dB
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)13
  • ET43014P

    GaN on SiC Transistors

    ET43014P

    Description

    RFHIC’s ET43014P is an 18W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    18.0W
    Gain
    16dB
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • Description

    RFHIC’s RNP21040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 ...

    Frequency
    2,100 ~ 2,170MHz
    Output Power
    56.0W
    Gain
    33dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)2,100 ~ 2,170
    Gain (dB)33
  • Description

    RFHIC’s RFW2500H10-28 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a ...

    Frequency
    20 ~ 2,500MHz
    Output Power
    4.0W
    Gain
    17dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 2,500
    Gain (dB)17
  • Description

    RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a ...

    Frequency
    20 ~ 1,000MHz
    Output Power
    20.0W
    Gain
    40dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 1,000
    Gain (dB)40
  • RT12014P

    GaN on SiC Transistors

    RT12014P

    Description

    RFHIC’s RT12014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3.2W
    Gain
    18dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)18
  • IE36170WD

    GaN on SiC Transistors

    IE36170WD

    Description

    RFHIC’s IE36170WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at ...

    Frequency
    3,520 ~ 3,560MHz
    Output Power
    32.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)3,520 ~ 3,560
    Gain (dB)15
  • IE27385D

    GaN on SiC Transistors

    IE27385D

    Description

    RFHIC’s IE27385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    69.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27330D

    GaN on SiC Transistors

    IE27330D

    Description

    RFHIC’s IE27330D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    63.0W
    Gain
    14dB
    Efficiency
    54%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27275D

    GaN on SiC Transistors

    IE27275D

    Description

    RFHIC’s IE27275D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    50.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE27220PE

    GaN on SiC Transistors

    IE27220PE

    Description

    RFHIC’s IE27220PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • IE27165PE

    GaN on SiC Transistors

    IE27165PE

    Description

    RFHIC’s IE27165PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    40.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6.3W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)19
  • IE26195WD

    GaN on SiC Transistors

    IE26195WD

    Description

    RFHIC’s IE26195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    32.0W
    Gain
    14dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE26085P

    GaN on SiC Transistors

    IE26085P

    Description

    RFHIC’s IE26085P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at ...

    Frequency
    2,496 ~ 2,690MHz
    Output Power
    19.0W
    Gain
    20dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,496 ~ 2,690
    Gain (dB)20
  • IE21385D

    GaN on SiC Transistors

    IE21385D

    Description

    RFHIC’s IE21385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    63.0W
    Gain
    15dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)15
  • IE23195WD

    GaN on SiC Transistors

    IE23195WD

    Description

    RFHIC’s IE23195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at ...

    Frequency
    2,300 ~ 2,400MHz
    Output Power
    40.0W
    Gain
    15dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,300 ~ 2,400
    Gain (dB)15
  • IE21330P

    GaN on SiC Transistors

    IE21330P

    Description

    RFHIC’s IE21330P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    79.0W
    Gain
    16dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)16
  • IE21220P

    GaN on SiC Transistors

    IE21220P

    Description

    RFHIC’s IE21220P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)17
  • Category