RFHIC’s ID18411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 1880 MHz....
RFHIC’s ID19601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 1995 MHz....
RFHIC’s ID19411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1995 to 2020 MHz....
RFHIC’s ID22601D is a discrete gallium nitride on silicon carbide (GaN-onSiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2200 MHz.D...
RFHIC’s ID26411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2570 to 2620 MHz....
RFHIC’s ID26601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz....