RFHIC는 RF 및 Microwave 애플리케이션용으로 광범위한 LNA(저소음 증폭기)를 설계, 제조, 지원합니다. RFHIC LNA의 기지국, 레이더, 통신 시스템 애플리케이션용 작동 주파수 범위는 50 ~ 4000 MHz 입니다. 각 LNA는 세라믹 필름
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Description
RFHIC”s WL2215-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2215-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzOutput PowerWGain15dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
RFHIC”s WL2208-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2208-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzOutput PowerWGain15dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
RFHIC”s WL1008-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1008-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzOutput PowerWGain16dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WL1015-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1015-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzOutput PowerWGain16dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WLP0640 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 20 to 520 MHz, the WLP0640 yields a high gain of 19.5 with ...
Frequency20 ~ 520MHzOutput PowerWGain20dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)20 -
Description
RFHIC”s WL2205-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 30 to 2200 MHz the WL2205-L yields a high gain of 15.5 with ...
Frequency30 ~ 2,200MHzOutput PowerWGain16dBEfficiency%StatusProduction
Freq. (MHz)30 ~ 2,200
Gain (dB)16 -
Description
RFHIC”s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with ...
Frequency1 ~ 520MHzOutput PowerWGain23dBEfficiency%StatusProduction
Freq. (MHz)1 ~ 520
Gain (dB)23 -
Description
RFHIC’s LCL3322-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 2700 to 3800 MHz, the LCL3322-L provides 21dB of gain and P1dB of 27dBm, while supporting ...
Frequency2,700 ~ 3,800MHzOutput PowerWGain21dBEfficiency%StatusProduction
Freq. (MHz)2,700 ~ 3,800
Gain (dB)21 -
Description
RFHIC’s CL2102D-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1750 to 2600 MHz, the CL2102D-L provides 14.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,750 ~ 2,600MHzOutput PowerWGain15dBEfficiency%StatusProduction
Freq. (MHz)1,750 ~ 2,600
Gain (dB)15 -
Description
RFHIC’s CL1302D-L is an L-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 1200 to 1400 MHz, the CL1302D-L provides 18dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,200 ~ 1,400MHzOutput PowerWGain18dBEfficiency%StatusProduction
Freq. (MHz)1,200 ~ 1,400
Gain (dB)18 -
Description
RFHIC’s CL3102D-L is an S-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 2700 to 3500 MHz, the CL3102D-L provides 11.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency2,700 ~ 3,500MHzOutput PowerWGain12dBEfficiency%StatusProduction
Freq. (MHz)2,700 ~ 3,500
Gain (dB)12
