RFHIC’s ID39084W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 4100 MHz. The ID39084W delivers 84 W of saturated power at 48V with a drain efficiency of 64% at Psat, 3.9 GHz. The ID39084W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

Lead-free and RoHS compliant.