RFHIC’s RFDGQ is a gallium-nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR systems and 4G LTE systems. Covering 3400 to 3700 MHz, the RFDGQ provides an output power of 15.8W with high efficiency of 45.5%. The RFDGQ is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RFDGQ is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 15.8W average power. The RFDGQ is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. Custom designs are available upon request.

This device is lead-free and RoHS compliant.