RFHIC’s ID41411DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3700 to 4100 MHz. The ID41411DR delivers 410 W of saturated power at 48V.
The ID41411DR is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, 5G NR systems.
Lead-free and RoHS compliant.