RFHIC’s IE08165P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency of 77% at Psat. The device is a single-stage internally matched power amplifier transistor, packaged in our NS-AS01 ceramic package. The IE08165P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
Lead-free and RoHS compliant.