RFHIC’s IE19195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency of 48% at 45dBm. The IE19195WD is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for muti-band, LTE, WCDMA base station applications.
Lead-free and RoHS compliant.