RFHIC’s IE23195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at 48V with a drain efficiency of 72% at Psat. The device is a single-stage internally matched power amplifier transistor, packaged in our RF12001DKR3 ceramic package. The IE23195WD can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
Lead-free and RoHS compliant.