RFHIC’s IE36220W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at 48V with a drain efficiency of 64% at Psat. The device is a single-stage internally matched power amplifier transistor, packaged in our RF12002KR3 ceramic package. The IE36220W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

Lead-free and RoHS compliant.