RFHIC’s IE27275D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency of 58% at 47dBm. The IE27275D is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE and multi-carrier base station equipment applications.
Lead-free and RoHS compliant.