RFHIC’s IE21385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency of 55% at 48 dBm. The IE21385D is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for multi-band, LTE, and WiMAX base station applications.
Lead-free and RoHS compliant.