RFHIC’s IE27385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency of 53.5% at 48.4 dBm. The IE27385D is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide high efficiency and reliability. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment.
Lead-free and RoHS compliant.