RFHIC’s RNP19040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose applications. Covering from 1800 to 1900 MHz, the RNP19040-50 yields a small signal gain of 33 dB with 47.5 dBm at P3dB peak. The RNP19040-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.