RFHIC’s RWS02540-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s GaN on SiC HEMT to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
RWS02540-10
StatusProduction
RWS02540-10
StatusProduction
Description
RFHIC’s RWS02540-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s GaN on SiC HEMT to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512
MHz
Output Power
40
W
Gain
44
dB
OIP3
53
dBm
P3dB
46
dBm
Peak Power
40
W
Dimension
63x38x14.4
mm
Vdd
28
V
Idd
3,500
mA
Description
RFHIC’s RWS02540-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s GaN on SiC HEMT to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512MHz
Output Power
40W
Gain
44dB
OIP3
53dBm
P3dB
46dBm
Peak Power
40W
Dimension
63x38x14.4mm
Vdd
28V
Idd
3500mA
연관 상품
-
Description
RFHIC’s RWP15040-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 2500 MHz, the RWP15040-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP15040-10 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power50WGain38dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)38 -
Description
RFHIC’s RUM15040-20 is a GaN on SiC wideband amplifier suited for communication and RF amplifier system applications. Covering from 500 to 2500 MHz, the RUM15040-20 yields a small signal gain of 56 dB with 46 dBm at P3dB peak. The RUM15040-20 is designed using RFHIC’s GaN on SiC HEMT on copper sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched and includes thermal overload and input power over drive protection.
Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power40WGain56dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)56 -
Description
RFHIC’s RTP1623050-20 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 1600 to 2300 MHz, the RTP1623050-20 yields a small signal gain of 10 dB with 54 dBm at P3dB peak. The RTP1623050-20 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
Lead-free and RoHS compliant.
...Frequency1,600 ~ 2,300MHzOutput Power251WGain10dBStatusProduction
Freq. (MHz)1,600 ~ 2,300
Gain (dB)10
