RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
RWS02540-10
StatusProduction
RWS02540-10
StatusProduction
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512
MHz
Output Power
40
W
Gain
44
dB
Dimension
63x38x14.4
mm
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512MHz
Output Power
40W
Gain
44dB
Dimension
63x38x14.4mm
연관 상품
-
Description
RFHIC’s RFC1G21H4-24-S is a wideband amplifier module designed for drive amplifier applications. With a frequency range of 20 to 1000 MHz, the RFC1G21H4-24-S provides a broadband small-signal gain of 21 dB with 36 dBm P3dB. The RFC1G21H4-24-S is assembled with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) providing low distortion and high small-signal gain. The device is packaged on a copper gold plate heat sink to provide excellent thermal conductivity. The RFC1G21H4-24-S is equipped with a over-voltage suppressor and external circuit is not required.
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Lead-free and RoHS compliant.Frequency20 ~ 1,000MHzOutput Power25.0WGain21dBStatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)21 -
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency1,000 ~ 3,000MHzOutput Power50.0WGain38dBStatusProduction
Freq. (MHz)1,000 ~ 3,000
Gain (dB)38 -
Description
RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 512MHzOutput Power80.0WGain38dBStatusProduction
Freq. (MHz)20 ~ 512
Gain (dB)38
