RFHIC’s RRP2731200-08 is an S-band, 250W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 2700 to3100 MHz, the RRP2731200-08 achieves 8dB of gain with an efficiency of 55%. The RRP2731200-08 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. The RRP2731200-08 achieves a duty of 20% and a pulse width of 500 us. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.

Lead-free and RoHS compliant.