RFHIC’s RWP25020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 3000 MHz, the RWP25020-50 yields a small signal gain of 25 dB with 44 dBm at P3dB peak. The RWP25020-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP25020-50
StatusProduction
RWP25020-50
StatusProduction
Description
RFHIC’s RWP25020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 3000 MHz, the RWP25020-50 yields a small signal gain of 25 dB with 44 dBm at P3dB peak. The RWP25020-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
2,000 ~ 3,000
MHz
Output Power
-
W
Gain
25
dB
Efficiency
-
%
Dimension
70 x 50.8 x 17.1
mm
Package
DP-75
Description
RFHIC’s RWP25020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 3000 MHz, the RWP25020-50 yields a small signal gain of 25 dB with 44 dBm at P3dB peak. The RWP25020-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
2000 ~ 3000MHz
Output Power
-W
Gain
25dB
Efficiency
-%
Dimension
70 x 50.8 x 17.1mm
Package
DP-75
연관 상품
-
Description
RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP03040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 520MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)42 -
Description
RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency700 ~ 2,700MHzOutput Power100.0WGain53dBEfficiency%StatusProduction
Freq. (MHz)700 ~ 2,700
Gain (dB)53 -
Description
RFHIC’s RUM43020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 6000 MHz, the RUM43020-10 yields a small signal gain of 35 dB with 43 dBm at P3dB peak. The RUM43020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
Lead-free and RoHS compliant.
...Frequency2,000 ~ 6,000MHzOutput Power20.0WGain35dBEfficiency%StatusProduction
Freq. (MHz)2,000 ~ 6,000
Gain (dB)35
