RFHIC’s RUM43020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 6000 MHz, the RUM43020-10 yields a small signal gain of 35 dB with 43 dBm at P3dB peak. The RUM43020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
Lead-free and RoHS compliant.