RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP20050-10
StatusProduction
RWP20050-10
StatusProduction
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
1,000 ~ 3,000
MHz
Output Power
50
W
Gain
38
dB
Efficiency
-
%
Dimension
72 x 50.8 x 16.8
mm
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
1000 ~ 3000MHz
Output Power
50W
Gain
38dB
Efficiency
-%
Dimension
72 x 50.8 x 16.8mm
연관 상품
-
Description
RFHIC’s RWP06040-60 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 1000 MHz, the RWP06040-60 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP06040-60 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency500 ~ 1,000MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)500 ~ 1,000
Gain (dB)42 -
Description
RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 512MHzOutput Power80.0WGain38dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 512
Gain (dB)38 -
Description
RFHIC’s RWP06040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 450 to 880 MHz, the RWP06040-10 yields a small signal gain of 40 dB with 45 dBm at P3dB. The RWP06040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency450 ~ 880MHzOutput Power32.0WGain40dBEfficiency%StatusProduction
Freq. (MHz)450 ~ 880
Gain (dB)40
