RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP20050-10
StatusProduction
RWP20050-10
StatusProduction
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
1,000 ~ 3,000
MHz
Output Power
50
W
Gain
38
dB
Efficiency
-
%
Dimension
72 x 50.8 x 16.8
mm
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
1000 ~ 3000MHz
Output Power
50W
Gain
38dB
Efficiency
-%
Dimension
72 x 50.8 x 16.8mm
연관 상품
-
Description
RFHIC’s RFW2500H10-28 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a small signal gain of 17 dB with 36 dBm at P3dB. The RFW2500H10-28 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 2,500MHzOutput Power4.0WGain17dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 2,500
Gain (dB)17 -
Description
RFHIC’s RTP1623050-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1600 to 2300 MHz, the RTP1623050-20 yields a small signal gain of 10 dB with 54 dBm at P3dB peak. The RTP1623050-20 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
Lead-free and RoHS compliant.
...Frequency1,600 ~ 2,300MHzOutput Power251.0WGain10dBStatusProduction
Freq. (MHz)1,600 ~ 2,300
Gain (dB)10 -
Description
RFHIC’s RWP15040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 2500 MHz, the RWP15040-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP15040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power50.0WGain38dBEfficiency%StatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)38
