RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP20050-10
StatusProduction
RWP20050-10
StatusProduction
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
1,000 ~ 3,000
MHz
Output Power
50
W
Gain
38
dB
Efficiency
-
%
Dimension
72 x 50.8 x 16.8
mm
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
1000 ~ 3000MHz
Output Power
50W
Gain
38dB
Efficiency
-%
Dimension
72 x 50.8 x 16.8mm
연관 상품
-
Description
RFHIC’s RWP15020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 2000 MHz, the RWP15020-50 yields a small signal gain of 29 dB with 43 dBm at P3dB. The RWP15020-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency1,000 ~ 2,000MHzOutput PowerWGain29dBEfficiency%StatusProduction
Freq. (MHz)1,000 ~ 2,000
Gain (dB)29 -
Description
RFHIC’s RUM15040-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for communication and RF amplifier system applications. Covering from 500 to 2500 MHz, the RUM15040-20 yields a small signal gain of 56 dB with 46 dBm at P3dB peak. The RUM15040-20 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on copper sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched and includes thermal overload and input power over drive protection.
Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power40.0WGain56dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)56 -
Description
RFHIC’s RWP25020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 3000 MHz, the RWP25020-50 yields a small signal gain of 25 dB with 44 dBm at P3dB peak. The RWP25020-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency2,000 ~ 3,000MHzOutput PowerWGain25dBEfficiency%StatusProduction
Freq. (MHz)2,000 ~ 3,000
Gain (dB)25
