RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP05040-10
StatusProduction
RWP05040-10
StatusProduction
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 1,000
MHz
Output Power
40
W
Gain
38
dB
Efficiency
-
%
Package
DP-75
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 1000MHz
Output Power
40W
Gain
38dB
Efficiency
-%
Package
DP-75
연관 상품
-
Description
RFHIC’s RWP03160-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a small signal gain of 43 dB with 54 dBm at OIP3. The RWP03160-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 500MHzOutput Power159.0WGain43dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)43 -
Description
RFHIC’s RNP19040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose applications. Covering from 1800 to 1900 MHz, the RNP19040-50 yields a small signal gain of 33 dB with 47.5 dBm at P3dB peak. The RNP19040-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency1,800 ~ 1,900MHzOutput Power56.0WGain33dBStatusProduction
Freq. (MHz)1,800 ~ 1,900
Gain (dB)33 -
Description
RFHIC’s RUM15040-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for communication and RF amplifier system applications. Covering from 500 to 2500 MHz, the RUM15040-20 yields a small signal gain of 56 dB with 46 dBm at P3dB peak. The RUM15040-20 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on copper sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched and includes thermal overload and input power over drive protection.
Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power40.0WGain56dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)56
