RFHIC’s RWP06040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 450 to 880 MHz, the RWP06040-10 yields a small signal gain of 40 dB with 45 dBm at P3dB. The RWP06040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP06040-10
StatusProduction
RWP06040-10
StatusProduction
Description
RFHIC’s RWP06040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 450 to 880 MHz, the RWP06040-10 yields a small signal gain of 40 dB with 45 dBm at P3dB. The RWP06040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
450 ~ 880
MHz
Output Power
32
W
Gain
40
dB
Efficiency
-
%
Dimension
70 x 50.8 x 17.1
mm
Package
DP-75
Description
RFHIC’s RWP06040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 450 to 880 MHz, the RWP06040-10 yields a small signal gain of 40 dB with 45 dBm at P3dB. The RWP06040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
450 ~ 880MHz
Output Power
32W
Gain
40dB
Efficiency
-%
Dimension
70 x 50.8 x 17.1 mm
Package
DP-75
연관 상품
-
Description
RFHIC’s RFW2500H10-28 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a small signal gain of 17 dB with 36 dBm at P3dB. The RFW2500H10-28 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 2,500MHzOutput Power4.0WGain17dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 2,500
Gain (dB)17 -
Description
RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a small signal gain of 40 dB with 43 dBm at P3dB. The RWP05020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 1,000MHzOutput Power20.0WGain40dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)40 -
Description
RFHIC’s RWP15040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 2500 MHz, the RWP15040-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP15040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power50.0WGain38dBEfficiency%StatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)38
