RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
RWS02540-10
StatusProduction
RWS02540-10
StatusProduction
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512
MHz
Output Power
40
W
Gain
44
dB
Efficiency
-
%
Dimension
63 x 38 x14.4
mm
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512MHz
Output Power
40W
Gain
44dB
Efficiency
-%
Dimension
63 x 38 x14.4mm
연관 상품
-
Description
RFHIC’s RUM43020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 6000 MHz, the RUM43020-10 yields a small signal gain of 35 dB with 43 dBm at P3dB peak. The RUM43020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
Lead-free and RoHS compliant.
...Frequency2,000 ~ 6,000MHzOutput Power20.0WGain35dBEfficiency%StatusProduction
Freq. (MHz)2,000 ~ 6,000
Gain (dB)35 -
Description
RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
...Frequency20 ~ 512MHzOutput Power20.0WGain41dBEfficiency%StatusSample available
Freq. (MHz)20 ~ 512
Gain (dB)41 -
Description
RFHIC’s RFC1G21H4-24 is a wideband amplifier designed for drive amplifier applications. With a frequency range of 20 to 1000 MHz, the RFC1G21H4-24 provides a broadband small-signal gain of 21 dB with 36 dBm P3dB. The RFC1G21H4-24 is assembled with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) providing low distortion and high small-signal gain. The device is packaged in a copper-gold plate heat sink to provide excellent thermal conductivity. The RFC1G21H4-24 is equipped with an over-voltage suppressor, and an external circuit is not required.
...
Lead-free and RoHS compliant.Frequency20 ~ 1,000MHzOutput Power2.0WGain21dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)21
