RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
RWS02540-10
StatusProduction
RWS02540-10
StatusProduction
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512
MHz
Output Power
40
W
Gain
44
dB
Efficiency
-
%
Dimension
63 x 38 x14.4
mm
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512MHz
Output Power
40W
Gain
44dB
Efficiency
-%
Dimension
63 x 38 x14.4mm
연관 상품
-
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 1,000MHzOutput Power40.0WGain38dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)38 -
Description
RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency700 ~ 2,700MHzOutput Power100.0WGain53dBEfficiency%StatusProduction
Freq. (MHz)700 ~ 2,700
Gain (dB)53 -
Description
RFHIC’s RFC1G21H4-24 is a wideband amplifier designed for drive amplifier applications. With a frequency range of 20 to 1000 MHz, the RFC1G21H4-24 provides a broadband small-signal gain of 21 dB with 36 dBm P3dB. The RFC1G21H4-24 is assembled with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) providing low distortion and high small-signal gain. The device is packaged in a copper-gold plate heat sink to provide excellent thermal conductivity. The RFC1G21H4-24 is equipped with an over-voltage suppressor, and an external circuit is not required.
...
Lead-free and RoHS compliant.Frequency20 ~ 1,000MHzOutput Power2.0WGain21dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)21
