RFHIC’s RRP3135900-12 is a S-band, 800W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 3100 to3500 MHz, theRRP3135900-12 achieves 12dB of gain with an efficiency of 56%. The RRP3135900-12 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. The RRP3135900-12 achieves a duty of 5% and a pulse width of 50 us. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.

Lead-free and RoHS compliant.