RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors i designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high-efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying to high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
RIM092K0-20
StatusProduction
RIM092K0-20
StatusProduction
Description
RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors i designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high-efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying to high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
Applications
ㆍMicrowave Heating & Drying
ㆍPlasma Generation
ㆍPolymer Modification
ㆍPlasma Sterilization
Frequency
900 ~ 930
MHz
Output Power
2,000
W
Gain
56
dB
Efficiency
63
%
Cooling Type
Water
Dimension
400 x 241 x 45
mm
Description
RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors i designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high-efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying to high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
Applications
ㆍMicrowave Heating & Drying
ㆍPlasma Generation
ㆍPolymer Modification
ㆍPlasma Sterilization
Frequency
900 ~ 930MHz
Output Power
2000W
Gain
56dB
Efficiency
63%
Cooling Type
Water
Dimension
400 x 241 x 45mm
연관 상품
-
Description
RFHIC’s RYP24200-20S is a 200 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW and pulsed operations. The RYP24200-20S is equipped with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RYP24200-20S is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems.
Custom designs are available upon request.Lead-free and RoHS compliant.
...Frequency2,400 ~ 2,500MHzOutput Power200.0WGain28dBEfficiency68%StatusObsolete
Freq. (MHz)2,400 ~ 2,500
Gain (dB)28 -
Description
RFHIC’s RRP162168020-17A is a 20 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168020-17A achieves 17 dB of gain with an efficiency of 25%. The RRP162168020-17A utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency16,200 ~ 16,800MHzOutput Power20.0WGain17dBEfficiency25%StatusProduction
Freq. (MHz)16,200 ~ 16,800
Gain (dB)17 -
Description
RFHIC’s RRP131K0-10 is a 1200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 1200 to 1400 MHz, the RRP131K0-10 achieves 54 dB of gain with an efficiency of 50%. The RRP131K0-10 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency1,200 ~ 1,400MHzOutput Power1,200.0WGain54dBEfficiency50%StatusProduction
Freq. (MHz)1,200 ~ 1,400
Gain (dB)54
