The RIH25030-20 is a GaN Hybrid power amplifier module designed for Industrial, Scientific, Medical (ISM) and Jamming applications at 2450MHz. RIH Series is an suitable for use in CW, pulse and Linear application and 50ohm input and output impedance matched device can deliver up to 30W of saturation power and operating drain voltage 45V.
RIH25030-20
StatusSample available
RIH25030-20
StatusSample available
Description
The RIH25030-20 is a GaN Hybrid power amplifier module designed for Industrial, Scientific, Medical (ISM) and Jamming applications at 2450MHz. RIH Series is an suitable for use in CW, pulse and Linear application and 50ohm input and output impedance matched device can deliver up to 30W of saturation power and operating drain voltage 45V.
Applications
• Industrial Heating and Drying
• Scientific
• Medical
• Plasma Generator
• Anti-Drone System
• Jamming System
Frequency
2,400 ~ 2,500
MHz
Output Power
30
W
Gain
15.5
dB
Efficiency
70
%
Description
The RIH25030-20 is a GaN Hybrid power amplifier module designed for Industrial, Scientific, Medical (ISM) and Jamming applications at 2450MHz. RIH Series is an suitable for use in CW, pulse and Linear application and 50ohm input and output impedance matched device can deliver up to 30W of saturation power and operating drain voltage 45V.
Applications
• Industrial Heating and Drying
• Scientific
• Medical
• Plasma Generator
• Anti-Drone System
• Jamming System
Frequency
2400 ~ 2500MHz
Output Power
30W
Gain
15.5dB
Efficiency
70%
연관 상품
-
Description
RFHIC’s HM0220-05A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for military radio, wideband receivers, and EW jammer applications. Covering from 200 to 2000 MHz, the HM0220-05A yields a high gain of 35 dB with 40% efficiency at P3dB. The HM0220-05A is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) and is packaged in a hybrid surface mount (SMD) using a metal-lid and aluminum nitride (AIN) board to provide excellent thermal dissipation. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. Custom designs available upon request. Lead-free and RoHS compliant.
...Frequency200 ~ 2,000MHzOutput Power5.0WGain35dBEfficiency%StatusProduction
Freq. (MHz)200 ~ 2,000
Pout (W)5
Gain (dB)35 -
Description
RFHIC’s HM0225-05A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for software defined radio (SDR) and trunked radio service (TRS) systems. Covering from 200 to 2500 MHz, the HM0225-05A yields a high gain of 35 dB with 35% efficiency at P3dB. The HM0225-05A is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) and is packaged in a hybrid surface mount (SMD) using a metal-lid and aluminum nitride (AIN) board to provide excellent thermal dissipation. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. Custom designs available upon request. Lead-free and RoHS compliant.
...Frequency200 ~ 2,500MHzOutput Power5.0WGain35dBEfficiency%StatusProduction
Freq. (MHz)200 ~ 2,500
Gain (dB)35 -
Description
RFHIC’s RTP0710050-10 is a unique GaN-SiC wideband power amplifier that powers 47dBm over a bandwidth of 700~1000MHz.This GaN wideband power amplifier has been specifically developed for communication system and other application in general.
...Frequency700 ~ 1,000MHzOutput Power50.0WGain15dBEfficiency25%StatusSample available
Freq. (MHz)700 ~ 1,000
Gain (dB)15
