RFHIC’s RIU256K0-40TG is a 6kW, GaN solid state microwave generator designed ideally for high-power plasma generating applications including CVD reactors for artificial diamond growth, PVD thin film deposition equipment for semiconductor films, and heating and sterilizing for ISM applications. The RIU256K0-40TG is built with RFHIC’s cutting-edge gallium-nitride (GaN) HEMTs and is operable from 2.4 to 2.5 GHz. The RIU256K0-40TG is a remote-type microwave generator system that comes equipped with a separate SSPA head, a 380 VAC 3-phase power supply unit (PSU), and a DC cable. The RIU256K0-40TG’s remote architecture allows the SSPA head to be installed separately from the power supply unit allowing for greater system flexibility and simplified system integration.
RIU256K0-40TG
RIU256K0-40TG
Description
RFHIC’s RIU256K0-40TG is a 6kW, GaN solid state microwave generator designed ideally for high-power plasma generating applications including CVD reactors for artificial diamond growth, PVD thin film deposition equipment for semiconductor films, and heating and sterilizing for ISM applications. The RIU256K0-40TG is built with RFHIC’s cutting-edge gallium-nitride (GaN) HEMTs and is operable from 2.4 to 2.5 GHz. The RIU256K0-40TG is a remote-type microwave generator system that comes equipped with a separate SSPA head, a 380 VAC 3-phase power supply unit (PSU), and a DC cable. The RIU256K0-40TG’s remote architecture allows the SSPA head to be installed separately from the power supply unit allowing for greater system flexibility and simplified system integration.
Applications
• Microwave CVD Reactor
• Plasma Generation
• Bio-material Modification
• MW Heating and Drying
Description
RFHIC’s RIU256K0-40TG is a 6kW, GaN solid state microwave generator designed ideally for high-power plasma generating applications including CVD reactors for artificial diamond growth, PVD thin film deposition equipment for semiconductor films, and heating and sterilizing for ISM applications. The RIU256K0-40TG is built with RFHIC’s cutting-edge gallium-nitride (GaN) HEMTs and is operable from 2.4 to 2.5 GHz. The RIU256K0-40TG is a remote-type microwave generator system that comes equipped with a separate SSPA head, a 380 VAC 3-phase power supply unit (PSU), and a DC cable. The RIU256K0-40TG’s remote architecture allows the SSPA head to be installed separately from the power supply unit allowing for greater system flexibility and simplified system integration.
Applications
• Microwave CVD Reactor
• Plasma Generation
• Bio-material Modification
• MW Heating and Drying
연관 상품
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Description
RFHIC’s RTP1623050-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1600 to 2300 MHz, the RTP1623050-20 yields a small signal gain of 10 dB with 54 dBm at P3dB peak. The RTP1623050-20 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
Lead-free and RoHS compliant.
...Frequency1,600 ~ 2,300MHzOutput Power251.0WGain10dBStatusProduction
Freq. (MHz)1,600 ~ 2,300
Gain (dB)10 -
Description
The RRT273115K-690 is a 15kW, S-band transmitter system operable from 2700 to 3100 MHz. The RRT273115K-690 is designed ideally for various radar applications such as airport surveillance radar, weather radar, defense radar, and more. The RRT273115K-690 comes fully equipped with eight SSPA shelves, a power supply unit, air cooling fans, a drive and control system. The transmitter is designed with a fault redundant structure allowing the transmitter to provide graceful degradation in case of one of multiple amplifier failure.
...Frequency2,700 ~ 3,100MHzOutput Power15,000.0WStatusSample available
Freq. (MHz)2,700 ~ 3,100 -
Description
RFHIC’s RUM43020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 6000 MHz, the RUM43020-10 yields a small signal gain of 35 dB with 43 dBm at P3dB peak. The RUM43020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
Lead-free and RoHS compliant.
...Frequency2,000 ~ 6,000MHzOutput Power20.0WGain35dBEfficiency%StatusProduction
Freq. (MHz)2,000 ~ 6,000
Gain (dB)35
