RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride (GaN) HEMTs providing excellent thermal stability and high breakdown voltage. The RIM09800-20 has an operating voltage of 50V and provides a drain efficiency of 65%. The RIM09800-20 is fully matched to 50 Ohms simplifying system integration.
RIM09800-20
StatusProduction
RIM09800-20
StatusProduction
Description
RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride (GaN) HEMTs providing excellent thermal stability and high breakdown voltage. The RIM09800-20 has an operating voltage of 50V and provides a drain efficiency of 65%. The RIM09800-20 is fully matched to 50 Ohms simplifying system integration.
Applications
• High Power Industry
• Microwave CVD Reactor
• Plasma Generator
• Food Science
• MW Heating and Drying
Frequency
900 ~ 930
MHz
Output Power
800
W
Gain
-
dB
Efficiency
65
%
Cooling Type
Water
Description
RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride (GaN) HEMTs providing excellent thermal stability and high breakdown voltage. The RIM09800-20 has an operating voltage of 50V and provides a drain efficiency of 65%. The RIM09800-20 is fully matched to 50 Ohms simplifying system integration.
Applications
• High Power Industry
• Microwave CVD Reactor
• Plasma Generator
• Food Science
• MW Heating and Drying
Frequency
900 ~ 930MHz
Output Power
800W
Gain
-dB
Efficiency
65%
Cooling Type
Water
연관 상품
-
Description
RFHIC’s RRP54592K4-24 is a 2400w, C-band, solid-state pulse pallet amp fabricated with RFHIC’s cutting GaN on SiC HEMT technology. The RRP54592K4-24 is designed ideally for various radar applications. The RRP54592K4-24 provides an operating bandwidth of 500 MHz from 5400 MHz to 5900 MHz, with a typical power gain of 23.8 dB.
...Frequency5,400 ~ 5,900MHzOutput Power2,400.0WGain24dBEfficiency30%StatusSample available
Freq. (MHz)5,400 ~ 5,900
Gain (dB)24 -
Description
The RRP52571K3-43 is a C-band, 1300W, power module designed for radar system applications. The RRP52571K3-43 operates from 5.2 ~ 5.7GHz, and provides an efficiency of 35% with duty up to 10%. The GM13514510D is fully matched to 50 ohms with integrated DC blocking capacitors on both RF ports simplifying system integration. The RRP52571K3-43’s superior performance allows system designers the flexibility to improve system performance while reducing size and cost.
This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and high efficiency.
...Frequency5,200 ~ 5,700MHzOutput Power1,300.0WGain43dBEfficiency35%StatusSample available
Freq. (MHz)5,200 ~ 5,700
Gain (dB)43 -
Description
RFHIC’s RRP5257550-35 is a 630 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP5257550-35 achieves 35 dB of gain with an efficiency of 30%. The RRP5257550-35 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency5,250 ~ 5,750MHzOutput Power630.0WGain35dBEfficiency30%StatusObsolete
Freq. (MHz)5,250 ~ 5,750
Gain (dB)35
