RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride (GaN) HEMTs providing excellent thermal stability and high breakdown voltage. The RIM09800-20 has an operating voltage of 50V and provides a drain efficiency of 65%. The RIM09800-20 is fully matched to 50 Ohms simplifying system integration.
RIM09800-20
StatusProduction
RIM09800-20
StatusProduction
Description
RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride (GaN) HEMTs providing excellent thermal stability and high breakdown voltage. The RIM09800-20 has an operating voltage of 50V and provides a drain efficiency of 65%. The RIM09800-20 is fully matched to 50 Ohms simplifying system integration.
Applications
• High Power Industry
• Microwave CVD Reactor
• Plasma Generator
• Food Science
• MW Heating and Drying
Frequency
900 ~ 930
MHz
Output Power
800
W
Gain
-
dB
Efficiency
65
%
Cooling Type
Water
Description
RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride (GaN) HEMTs providing excellent thermal stability and high breakdown voltage. The RIM09800-20 has an operating voltage of 50V and provides a drain efficiency of 65%. The RIM09800-20 is fully matched to 50 Ohms simplifying system integration.
Applications
• High Power Industry
• Microwave CVD Reactor
• Plasma Generator
• Food Science
• MW Heating and Drying
Frequency
900 ~ 930MHz
Output Power
800W
Gain
-dB
Efficiency
65%
Cooling Type
Water
연관 상품
-
Description
RFHIC’s RFCEK is a gallium-nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR systems and 4G LTE systems. Covering 2300 to 2400 MHz, the RFCEK provides an output power of 7.9W with high efficiency of 47%. The RFCEK is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RFCEK is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 7.9W average power. The RFCEK is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. Custom designs are available upon request.
This device is lead-free and RoHS compliant.
...Frequency2,300 ~ 2,400MHzOutput Power7.9WGain34dBEfficiency47%StatusSample availableFreq. (MHz)2,300 ~ 2,400
Gain (dB)34 -
Description
RFHIC’s RRM8894010-MID is a 10W, X Band gallium-nitride (GaN) transmit and receive Module designed ideally for next-generation active electronically scanned array radar systems. Operable at 8.8 to 9.4 GHz, (X-band) and is 50 Ohms fully matched for simple design integration. The RRM8894010-MID provides key features such as noise immunity and range extension for SPI Bus using LVDS interface. A 6BIT phase and attenuation control and a low noise figure resulting in a precise and accurate receive signal.
Lead-free and RoHS compliant.
Custom designs are available upon request.ITAR Free
...Frequency8,800 ~ 9,400MHzOutput Power10.0WStatusSample available
Freq. (MHz)8,800 ~ 9,400 -
Description
RFHIC’s RRM9397200-56A is a 200W, gallium-nitride (GaN) Pulse Amplifier Module designed ideally for weather and maritime radar applications. Operable at 9300 to 9700 MHz (X-band) and is 50 Ohms fully matched for simple design integration. The RRM9397200-56A pulse amplifier is built using RFHIC’s state of the art gallium-nitride (GaN) high-electron-mobility (HEMT)s providing excellent thermal stability and efficiency.
Lead-free and RoHS compliant.
...
Custom designs are available upon request.Frequency9,300 ~ 9,700MHzOutput Power200.0WStatusSample available
Freq. (MHz)9,300 ~ 9,700
