RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an 82.5% drain efficiency at 50V. The IE09150PC is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. Unlike traditional silicon transistors, the IE09150PC utilizes RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology to provide users with higher efficiency, reliability, and excellent thermal stability. The device is ideally suited for microwave heating, drying, and plasma lighting applications. Custom designs available upon request.
Lead-free and RoHS compliant.