RFHIC’s ET43014P is an 18W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, the ET43014P provides a high gain of 15.5 dB with a 64% drain efficiency at 50V. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. Unlike traditional silicon-based drive transistors, the ET43014P is fabricated using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology providing higher efficiency, wider bandwidth, and excellent thermal stability. Custom designs are available upon request.
Lead-free and RoHS compliant.