RFHIC’s RYP24200-20S is a 200 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW and pulsed operations. The RYP24200-20S is equipped with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RYP24200-20S is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems.
Custom designs are available upon request.
Lead-free and RoHS compliant.