RFHIC’s IE13550D is a 550W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the IE13550D provides a high gain of 15 dB with an 80% drain efficiency at 50V. The IE13550D is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. The IE13550D is designed to replace current vacuum tubes like the magnetron, klystron, and or TWTA to provide users with higher efficiency, reliability, and excellent thermal stability. Custom designs are available upon request.
Lead-free and RoHS compliant.