The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
RIM251K6-20
RIM251K6-20
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
연관 상품
-
Description
RFHIC’s RRP131K0-10 is a 1200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 1200 to 1400 MHz, the RRP131K0-10 achieves 54 dB of gain with an efficiency of 50%. The RRP131K0-10 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency1,200 ~ 1,400MHzOutput Power1,200.0WGain54dBEfficiency50%StatusProduction
Freq. (MHz)1,200 ~ 1,400
Gain (dB)54 -
Description
RFHIC’s RRP162168020-07A is a 20 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168020-07A achieves 7 dB of gain with an efficiency of 35%. The RRP162168020-07A utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency16,200 ~ 16,800MHzOutput Power20.0WGain7dBEfficiency35%StatusProduction
Freq. (MHz)16,200 ~ 16,800
Gain (dB)7 -
Description
RFHIC’s RRP5257550-35 is a 630 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP5257550-35 achieves 35 dB of gain with an efficiency of 30%. The RRP5257550-35 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency5,250 ~ 5,750MHzOutput Power630.0WGain35dBEfficiency30%StatusObsolete
Freq. (MHz)5,250 ~ 5,750
Gain (dB)35
