The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
RIM251K6-20
RIM251K6-20
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
연관 상품
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Description
RFHIC’s RFCEK is a gallium-nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR systems and 4G LTE systems. Covering 2300 to 2400 MHz, the RFCEK provides an output power of 7.9W with high efficiency of 47%. The RFCEK is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RFCEK is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 7.9W average power. The RFCEK is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. Custom designs are available upon request.
This device is lead-free and RoHS compliant.
...Frequency2,300 ~ 2,400MHzOutput Power7.9WGain34dBEfficiency47%StatusSample availableFreq. (MHz)2,300 ~ 2,400
Gain (dB)34 -
Description
RFHIC’s RFCGK is a gallium-nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR systems and 4G LTE systems. Covering 2495 to 2695 MHz, the RFCGK provides an output power of 10W with high efficiency of 46.4%. The RFCGK is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RFCGK is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 10W average power. The RFCGK is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. Custom designs are available upon request.
This device is lead-free and RoHS compliant.
...Frequency2,495 ~ 1,695MHzOutput Power10.0WGain33dBEfficiency46%StatusSample availableFreq. (MHz)2,495 ~ 1,695
Gain (dB)33 -
Description
RFHIC’s RRP27311K0-22 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP27311K0-22 operates at 2700 to 3100 MHz (S-band), with pulsed output powers up to 1000W. The power amplifier delivers a duty cycle up to 10% with an efficiency of 45%. This compact power amplifier is fully matched to 50 Ohms providing simpler system integration.
Lead-free and RoHS compliant.
...Frequency2,700 ~ 3,100MHzOutput Power1,000.0WGain22dBEfficiency45%StatusSample available
Freq. (MHz)2,700 ~ 3,100
Gain (dB)22
