The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
RIM251K6-20
RIM251K6-20
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
연관 상품
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Description
RFHIC’s RRP56571K0-42 is a 1200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 5600 to 5700 MHz, the RRP56571K0-42 achieves 42 dB of gain with an efficiency of 35%. The RRP56571K0-42 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency5,600 ~ 5,700MHzOutput Power1,200.0WGain42dBEfficiency35%StatusSample available
Freq. (MHz)5,600 ~ 5,700
Gain (dB)42 -
Description
RFHIC’s RRP162168100-08A is a 100 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168100-08A achieves 8 dB of gain with an efficiency of 20%. The RRP162168100-08A utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency16,200 ~ 16,800MHzOutput Power100.0WGain8dBEfficiency20%StatusProduction
Freq. (MHz)16,200 ~ 16,800
Gain (dB)8 -
Description
RFHIC’s RRM8894010-MID is a 10W, X Band gallium-nitride (GaN) transmit and receive Module designed ideally for next-generation active electronically scanned array radar systems. Operable at 8.8 to 9.4 GHz, (X-band) and is 50 Ohms fully matched for simple design integration. The RRM8894010-MID provides key features such as noise immunity and range extension for SPI Bus using LVDS interface. A 6BIT phase and attenuation control and a low noise figure resulting in a precise and accurate receive signal.
Lead-free and RoHS compliant.
Custom designs are available upon request.ITAR Free
...Frequency8,800 ~ 9,400MHzOutput Power10.0WStatusSample available
Freq. (MHz)8,800 ~ 9,400
