The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
RIM251K6-20
RIM251K6-20
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). The RIM251K-6-20 is operable from 2400 to 2500 MHz and is designed with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC HEMTs providing excellent thermal stability and breakdown voltage. The RIM251K-6-20 is operable for both continuous wave (CW) and pulse applications. The RIM251K6-20 is equipped with RFHIC’s software suite allowing users to digitally control and monitor the amplifier’s power, frequency, and signal source. The RIM251K-6-20 is also equipped with high-grade isolators protecting the device up to 6:1 VSWR at max output power. In case a higher reflected power is detected, the amplifier will automatically shut down preventing amplifier failure.
Applications
• Microwave Flash Welding
• Plasma Generation
• Microwave Sintering
• Microwave Cladding
• Microwave Joining
• Microwave Heating
• Microwave Irradiation & Sterilization
연관 상품
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Description
The RRM093101800-59 is designed for Radar system application frequencies from 9.3~10.0GHz. This module uses GaN HEMT technology which performs high breakdown voltage, wide bandwidth, and high efficiency.
...Frequency9,300 ~ 10,000MHzOutput Power800.0WGain59dBEfficiency15%StatusSample availableFreq. (MHz)9,300 ~ 10,000
Gain (dB)59 -
Description
The RRP52571K3-43 is a C-band, 1300W, power module designed for radar system applications. The RRP52571K3-43 operates from 5.2 ~ 5.7GHz, and provides an efficiency of 35% with duty up to 10%. The GM13514510D is fully matched to 50 ohms with integrated DC blocking capacitors on both RF ports simplifying system integration. The RRP52571K3-43’s superior performance allows system designers the flexibility to improve system performance while reducing size and cost.
This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and high efficiency.
...Frequency5,200 ~ 5,700MHzOutput Power1,300.0WGain43dBEfficiency35%StatusSample available
Freq. (MHz)5,200 ~ 5,700
Gain (dB)43 -
Description
RFHIC’s RRP54591K2-42 is a 1200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 5400 to 5900 MHz, the RRP54591K2-42 achieves 42 dB of gain with an efficiency of 30%. The RRP54591K2-42 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency5,400 ~ 5,900MHzOutput Power1,200.0WGain42dBEfficiency30%StatusProduction
Freq. (MHz)5,400 ~ 5,900
Gain (dB)42
