GaN on SiC Transistors

현재 RFHIC의 최첨단 GaN on SiC 트랜지스터는 오늘날 가장 까다로운 산업들의 문제들을 해결하고 있습니다. 확연하게 작은 사이즈, 고효율, 강력하고 광범위한 주파수 범위는 RFHIC에서만 만나보실 수 있습니다.

현재 RFHIC의 최첨단 GaN on SiC 트랜지스터는 오늘날 가장 까다로운 산업들의 문제들을 해결하고 있습니다. 확연하게 작은 사이즈, 고효율, 강력하고 광범위한 주파수 범위는 RFHIC에서만 만나보실 수 있습니다.

현재 RFHIC의 최첨단 GaN on SiC 트랜지스터는 오늘날 가장 까다로운 산업들의 문제들을 해결하고 있습니다. 확연하게 작은 사이즈, 고효율, 강력하고 광범위한 주파수 범위는 RFHIC에서만 만나보실 수 있습니다.

현재 RFHIC의 최첨단 GaN on SiC 트랜지스터는 오늘날 가장 까다로운 산업들의 문제들을 해결하고 있습니다. 확연하게 작은 사이즈, 고효율, 강력하고 광범위한 주파수 범위는 RFHIC에서만 만나보실 수 있습니다.

  • ID36411D

    GaN on SiC Transistors

    ID36411D

    Description

    RFHIC’s ID36411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3500 to 3600 MHz. The ID36411D delivers 410 W of saturated power at ...

    Frequency
    3,500 ~ 3,600MHz
    Output Power
    52.5W
    Gain
    15dB
    Efficiency
    48%
    StatusSample available
    Freq. (MHz)3,500 ~ 3,600
    Gain (dB)15
  • ID37411D

    GaN on SiC Transistors

    ID37411D

    Description

    RFHIC’s ID37411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3600 to 3800 MHz. The ID37411D delivers 410 W of saturated power at ...

    Frequency
    3,600 ~ 3,800MHz
    Output Power
    56.2W
    Gain
    14dB
    Efficiency
    47%
    StatusSample available
    Freq. (MHz)3,600 ~ 3,800
    Gain (dB)14
  • ID38411DR

    GaN on SiC Transistors

    ID38411DR

    Description

    RFHIC’s ID38411DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3700 to 4000 MHz. The ID38411DR delivers 410 W of saturated power at ...

    Frequency
    3,700 ~ 4,000MHz
    Output Power
    56.2W
    Gain
    14dB
    Efficiency
    46%
    StatusSample available
    Freq. (MHz)3,700 ~ 4,000
    Gain (dB)14
  • ID41411DR

    GaN on SiC Transistors

    ID41411DR

    Description

    RFHIC’s ID41411DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3700 to 4100 MHz. The ID41411DR delivers 410 W of saturated power at ...

    Frequency
    3,700 ~ 4,100MHz
    Output Power
    56.2W
    Gain
    14dB
    Efficiency
    46%
    StatusSample available
    Freq. (MHz)3,700 ~ 4,100
    Gain (dB)14
  • ID19601D

    GaN on SiC Transistors

    ID19601D

    Description

    RFHIC’s ID19601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1930 to 1995 MHz. The ID19601D delivers 600 W of saturated power at ...

    Frequency
    1,930 ~ 1,995MHz
    Output Power
    81.3W
    Gain
    16dB
    Efficiency
    48%
    StatusSample available
    Freq. (MHz)1,930 ~ 1,995
    Gain (dB)16
  • ID22601D

    GaN on SiC Transistors

    ID22601D

    Description

    RFHIC’s ID22601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2200 MHz. The ID22601D delivers 530 W of saturated power at ...

    Frequency
    2,110 ~ 2,200MHz
    Output Power
    75.9W
    Gain
    15dB
    Efficiency
    47%
    StatusSample available
    Freq. (MHz)2,110 ~ 2,200
    Gain (dB)15
  • ID26601D

    GaN on SiC Transistors

    ID26601D

    Description

    RFHIC’s ID26601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The ID26601D delivers 600 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    84.5W
    Gain
    15dB
    Efficiency
    47%
    StatusSample available
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)15
  • ID38601D

    GaN on SiC Transistors

    ID38601D

    Description

    RFHIC’s ID38601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3700 to 3980 MHz. The ID38601D delivers 600 W of saturated power at ...

    Frequency
    3,700 ~ 3,980MHz
    Output Power
    81.2W
    Gain
    14dB
    Efficiency
    42%
    StatusSample available
    Freq. (MHz)3,700 ~ 3,980
    Gain (dB)14
  • ID39084W

    GaN on SiC Transistors

    ID39084W

    Description

    RFHIC’s ID39084W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 4100 MHz. The ID39084W delivers 84 W of saturated power at 48V ...

    Frequency
    3,700 ~ 4,100MHz
    Output Power
    3.0W
    Gain
    18dB
    Efficiency
    64%
    StatusSample available
    Freq. (MHz)3,700 ~ 4,100
    Gain (dB)18
  • ID46531D

    GaN on SiC Transistors

    ID46531D

    Description

    RFHIC’s ID46531D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 4500 to 4600 MHz. The ID46531D delivers 510 W of saturated power at ...

    Frequency
    4,500 ~ 4,600MHz
    Output Power
    70.8W
    Gain
    13dB
    Efficiency
    42%
    StatusSample available
    Freq. (MHz)4,500 ~ 4,600
    Gain (dB)13
  • ID36461D

    GaN on SiC Transistors

    ID36461D

    Description

    RFHIC’s ID36461D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 3600 MHz. The ID36461D delivers 460 W of saturated power at 48V.

    The ...

    Frequency
    3,400 ~ 3,600MHz
    Output Power
    56.2W
    Gain
    14dB
    Efficiency
    47%
    StatusSample available
    Freq. (MHz)3,400 ~ 3,600
    Gain (dB)14
  • ID49531D

    GaN on SiC Transistors

    ID49531D

    Description

    RFHIC’s ID49531D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 4800 to 5000 MHz. The ID49531D delivers 490 W of saturated power at ...

    Frequency
    4,800 ~ 5,000MHz
    Output Power
    56.2W
    Gain
    14dB
    Efficiency
    43%
    StatusSample available
    Freq. (MHz)4,800 ~ 5,000
    Gain (dB)14
  • ID38461DR

    GaN on SiC Transistors

    ID38461DR

    Description

    RFHIC’s ID38461DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 3980 MHz. The ID38461DR delivers 447 W of saturated power at 48V.

    The ...

    Frequency
    3,700 ~ 3,980MHz
    Output Power
    56.2W
    Gain
    15dB
    Efficiency
    45%
    StatusSample available
    Freq. (MHz)3,700 ~ 3,980
    Gain (dB)15
  • ID18411D

    GaN on SiC Transistors

    ID18411D

    Description

    RFHIC’s ID18411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1800 to 1880 MHz. The ID18411D delivers 410 W of saturated power at ...

    Frequency
    1,800 ~ 1,880MHz
    Output Power
    56.2W
    Gain
    18dB
    Efficiency
    54%
    StatusSample available
    Freq. (MHz)1,800 ~ 1,880
    Gain (dB)18
  • ID19411D

    GaN on SiC Transistors

    ID19411D

    Description

    RFHIC’s ID19411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1995 to 2020 MHz. The ID19411D delivers 410 W of saturated power at ...

    Frequency
    1,995 ~ 2,020MHz
    Output Power
    55.0W
    Gain
    18dB
    Efficiency
    50%
    StatusSample available
    Freq. (MHz)1,995 ~ 2,020
    Gain (dB)18
  • ID20411D

    GaN on SiC Transistors

    ID20411D

    Description

    RFHIC’s ID20411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1930 to 2200 MHz.

    The ID20411D is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) ...

    Frequency
    1,930 ~ 2,200MHz
    Output Power
    56.2W
    Gain
    16dB
    Efficiency
    48%
    StatusSample available
    Freq. (MHz)1,930 ~ 2,200
    Gain (dB)16
  • ID22411D

    GaN on SiC Transistors

    ID22411D

    Description

    RFHIC’s ID22411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2200 MHz. The ID22411D delivers 410 W of saturated power at ...

    Frequency
    2,110 ~ 2,200MHz
    Output Power
    53.7W
    Gain
    18dB
    Efficiency
    52%
    StatusSample available
    Freq. (MHz)2,110 ~ 2,200
    Gain (dB)18
  • ID26411D

    GaN on SiC Transistors

    ID26411D

    Description

    RFHIC’s ID26411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2570 to 2620 MHz. The ID26411D delivers 410 W of saturated power at ...

    Frequency
    2,570 ~ 2,620MHz
    Output Power
    58.9W
    Gain
    15dB
    Efficiency
    51%
    StatusSample available
    Freq. (MHz)2,570 ~ 2,620
    Gain (dB)15
  • ETQ2014P

    GaN on SiC Transistors

    ETQ2014P

    Description

    RFHIC’s ETQ2014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3.2W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)3
    Gain (dB)19
  • DT12060P

    GaN on SiC Transistors

    DT12060P

    Description

    RFHIC’s DT12060P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    14.1W
    Gain
    17dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)14
    Gain (dB)17
  • IE05600DC

    GaN on SiC Transistors

    IE05600DC

    Description

    The 580W CW RF Power Transistor is designed for particle accelerator and microwave energy applications at 500MHz. This device is suitable for use in CW, pulse and linear applications. This ...

    Frequency
    499 ~ 501MHz
    Output Power
    580.0W
    Efficiency
    75%
    StatusSample available
    Freq. (MHz)499 ~ 501
  • IE24300P

    GaN on SiC Transistors

    IE24300P

    Description

    RFHIC’s IE24300P is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    300.0W
    Gain
    11dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)11
  • IE24150P

    GaN on SiC Transistors

    IE24150P

    Description

    RFHIC’s IE24150P is a 150W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    150.0W
    Gain
    13dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)13
  • IE24200P

    GaN on SiC Transistors

    IE24200P

    Description

    RFHIC’s IE24200P is a 200W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
  • IE13550D

    GaN on SiC Transistors

    IE13550D

    Description

    RFHIC’s IE13550D is a 550W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    550.0W
    Gain
    15dB
    Efficiency
    79%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)15
  • IE24100P

    GaN on SiC Transistors

    IE24100P

    Description

    RFHIC’s IE24100P is a 100W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor fabricated with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology. Operating from 2400 to 2500 MHz, ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Gain
    15dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)15
  • IE09150PC

    GaN on SiC Transistors

    IE09150PC

    Description

    RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an ...

    Frequency
    900 ~ 930MHz
    Output Power
    150.0W
    Gain
    18dB
    Efficiency
    83%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • IE09300PC

    GaN on SiC Transistors

    IE09300PC

    Description

    RFHIC’s IE09300PC is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the ...

    Frequency
    900 ~ 930MHz
    Output Power
    300.0W
    Gain
    18dB
    Efficiency
    80%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • ET43028P

    GaN on SiC Transistors

    ET43028P

    Description

    RFHIC’s ET43028P is a 34W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    34.0W
    Gain
    15dB
    Efficiency
    67%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)15
  • ET43055P

    GaN on SiC Transistors

    ET43055P

    Description

    RFHIC’s ET43055P is a 70W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    70.0W
    Gain
    13dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)13
  • ET43014P

    GaN on SiC Transistors

    ET43014P

    Description

    RFHIC’s ET43014P is an 18W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    18.0W
    Gain
    16dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • RT12014P

    GaN on SiC Transistors

    RT12014P

    Description

    RFHIC’s RT12014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3.2W
    Gain
    18dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)18
  • IE36170WD

    GaN on SiC Transistors

    IE36170WD

    Description

    RFHIC’s IE36170WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at ...

    Frequency
    3,520 ~ 3,560MHz
    Output Power
    32.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)3,520 ~ 3,560
    Gain (dB)15
  • IE27385D

    GaN on SiC Transistors

    IE27385D

    Description

    RFHIC’s IE27385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    69.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27330D

    GaN on SiC Transistors

    IE27330D

    Description

    RFHIC’s IE27330D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    63.0W
    Gain
    14dB
    Efficiency
    54%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27275D

    GaN on SiC Transistors

    IE27275D

    Description

    RFHIC’s IE27275D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    50.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE27220PE

    GaN on SiC Transistors

    IE27220PE

    Description

    RFHIC’s IE27220PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • IE27165PE

    GaN on SiC Transistors

    IE27165PE

    Description

    RFHIC’s IE27165PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    40.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6.3W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)19
  • IE26195WD

    GaN on SiC Transistors

    IE26195WD

    Description

    RFHIC’s IE26195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    32.0W
    Gain
    14dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE26085P

    GaN on SiC Transistors

    IE26085P

    Description

    RFHIC’s IE26085P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at ...

    Frequency
    2,496 ~ 2,690MHz
    Output Power
    19.0W
    Gain
    20dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,496 ~ 2,690
    Gain (dB)20
  • IE21385D

    GaN on SiC Transistors

    IE21385D

    Description

    RFHIC’s IE21385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    63.0W
    Gain
    15dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)15
  • IE23195WD

    GaN on SiC Transistors

    IE23195WD

    Description

    RFHIC’s IE23195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at ...

    Frequency
    2,300 ~ 2,400MHz
    Output Power
    40.0W
    Gain
    15dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,300 ~ 2,400
    Gain (dB)15
  • IE21330P

    GaN on SiC Transistors

    IE21330P

    Description

    RFHIC’s IE21330P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    79.0W
    Gain
    16dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)16
  • IE21220P

    GaN on SiC Transistors

    IE21220P

    Description

    RFHIC’s IE21220P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)17
  • IE21165PE

    GaN on SiC Transistors

    IE21165PE

    Description

    RFHIC’s IE21165PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    37.0W
    Gain
    18dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE21110P

    GaN on SiC Transistors

    IE21110P

    Description

    RFHIC’s IE21110P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    25.0W
    Gain
    18dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE18250D

    GaN on SiC Transistors

    IE18250D

    Description

    RFHIC’s IE18250D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    45.0W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)17
  • Category