RF Power Transistors

  • ETQ2014P

    GaN on SiC Transistors

    ETQ2014P

    Description

    RFHIC’s ETQ2014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3.2W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)3
    Gain (dB)19
  • DT12060P

    GaN on SiC Transistors

    DT12060P

    Description

    RFHIC’s DT12060P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    14.1W
    Gain
    17dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)14
    Gain (dB)17
  • IE05600DC

    GaN on SiC Transistors

    IE05600DC

    Description

    The 580W CW RF Power Transistor is designed for particle accelerator and microwave energy applications at 500MHz. This device is suitable for use in CW, pulse and linear applications. This ...

    Frequency
    499 ~ 501MHz
    Output Power
    580.0W
    Efficiency
    75%
    StatusSample available
    Freq. (MHz)499 ~ 501
  • IE24300P

    GaN on SiC Transistors

    IE24300P

    Description

    RFHIC’s IE24300P is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    300.0W
    Gain
    11dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)11
  • IE24150P

    GaN on SiC Transistors

    IE24150P

    Description

    RFHIC’s IE24150P is a 150W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    150.0W
    Gain
    13dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)13
  • IE24200P

    GaN on SiC Transistors

    IE24200P

    Description

    RFHIC’s IE24200P is a 200W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
  • IE13550D

    GaN on SiC Transistors

    IE13550D

    Description

    RFHIC’s IE13550D is a 550W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    550.0W
    Gain
    15dB
    Efficiency
    79%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)15
  • IE24100P

    GaN on SiC Transistors

    IE24100P

    Description

    RFHIC’s IE24100P is a 100W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor fabricated with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology. Operating from 2400 to 2500 MHz, ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Gain
    15dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)15
  • IE09150PC

    GaN on SiC Transistors

    IE09150PC

    Description

    RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an ...

    Frequency
    900 ~ 930MHz
    Output Power
    150.0W
    Gain
    18dB
    Efficiency
    83%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • IE09300PC

    GaN on SiC Transistors

    IE09300PC

    Description

    RFHIC’s IE09300PC is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the ...

    Frequency
    900 ~ 930MHz
    Output Power
    300.0W
    Gain
    18dB
    Efficiency
    80%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • ET43028P

    GaN on SiC Transistors

    ET43028P

    Description

    RFHIC’s ET43028P is a 34W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    34.0W
    Gain
    15dB
    Efficiency
    67%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)15
  • ET43055P

    GaN on SiC Transistors

    ET43055P

    Description

    RFHIC’s ET43055P is a 70W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    70.0W
    Gain
    13dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)13
  • ET43014P

    GaN on SiC Transistors

    ET43014P

    Description

    RFHIC’s ET43014P is an 18W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    18.0W
    Gain
    16dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • RT12014P

    GaN on SiC Transistors

    RT12014P

    Description

    RFHIC’s RT12014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3.2W
    Gain
    18dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)18
  • IE36170WD

    GaN on SiC Transistors

    IE36170WD

    Description

    RFHIC’s IE36170WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at ...

    Frequency
    3,520 ~ 3,560MHz
    Output Power
    32.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)3,520 ~ 3,560
    Gain (dB)15
  • IE27385D

    GaN on SiC Transistors

    IE27385D

    Description

    RFHIC’s IE27385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    69.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27330D

    GaN on SiC Transistors

    IE27330D

    Description

    RFHIC’s IE27330D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    63.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27275D

    GaN on SiC Transistors

    IE27275D

    Description

    RFHIC’s IE27275D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    50.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE27220PE

    GaN on SiC Transistors

    IE27220PE

    Description

    RFHIC’s IE27220PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • IE27165PE

    GaN on SiC Transistors

    IE27165PE

    Description

    RFHIC’s IE27165PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    40.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6.3W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)19
  • IE26195WD

    GaN on SiC Transistors

    IE26195WD

    Description

    RFHIC’s IE26195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    32.0W
    Gain
    14dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE26085P

    GaN on SiC Transistors

    IE26085P

    Description

    RFHIC’s IE26085P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at ...

    Frequency
    2,496 ~ 2,690MHz
    Output Power
    19.0W
    Gain
    20dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,496 ~ 2,690
    Gain (dB)20
  • IE21385D

    GaN on SiC Transistors

    IE21385D

    Description

    RFHIC’s IE21385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    63.0W
    Gain
    15dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)15
  • IE23195WD

    GaN on SiC Transistors

    IE23195WD

    Description

    RFHIC’s IE23195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at ...

    Frequency
    2,300 ~ 2,400MHz
    Output Power
    40.0W
    Gain
    15dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,300 ~ 2,400
    Gain (dB)15
  • IE21330P

    GaN on SiC Transistors

    IE21330P

    Description

    RFHIC’s IE21330P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    79.0W
    Gain
    16dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)16
  • IE21220P

    GaN on SiC Transistors

    IE21220P

    Description

    RFHIC’s IE21220P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)17
  • IE21165PE

    GaN on SiC Transistors

    IE21165PE

    Description

    RFHIC’s IE21165PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    37.0W
    Gain
    18dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE21110P

    GaN on SiC Transistors

    IE21110P

    Description

    RFHIC’s IE21110P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    25.0W
    Gain
    18dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE18250D

    GaN on SiC Transistors

    IE18250D

    Description

    RFHIC’s IE18250D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    45.0W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)17
  • IE18220PG

    GaN on SiC Transistors

    IE18220PG

    Description

    RFHIC’s IE18220PG is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18220PG delivers 220 W of saturated power at ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    50.0W
    Gain
    18dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)18
  • IE19195WD

    GaN on SiC Transistors

    IE19195WD

    Description

    RFHIC’s IE19195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at ...

    Frequency
    1,880 ~ 2,025MHz
    Output Power
    32.0W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)1,880 ~ 2,025
    Gain (dB)17
  • IE18330D

    GaN on SiC Transistors

    IE18330D

    Description

    RFHIC’s IE18330D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    63.0W
    Gain
    16dB
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)16
  • IE18330PG

    GaN on SiC Transistors

    IE18330PG

    Description

    RFHIC’s IE18330PG is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18330PG delivers 330 W of saturated power at ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    74.0W
    Gain
    16dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)16
  • IE18165P

    GaN on SiC Transistors

    IE18165P

    Description

    RFHIC’s IE18165P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    37.0W
    Gain
    18dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)18
  • IE18085P

    GaN on SiC Transistors

    IE18085P

    Description

    RFHIC’s IE18085P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18085P delivers 85 W of saturated power at ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    19.0W
    Gain
    19dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)19
  • IE08220P

    GaN on SiC Transistors

    IE08220P

    Description

    RFHIC’s IE08220P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at ...

    Frequency
    758 ~ 858MHz
    Output Power
    50.0W
    Gain
    22dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)758 ~ 858
    Gain (dB)22
  • IE36085W

    GaN on SiC Transistors

    IE36085W

    Description

    RFHIC’s IE36085W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at ...

    Frequency
    3,400 ~ 3,600MHz
    Output Power
    19.0W
    Gain
    17dB
    Efficiency
    68%
    StatusProduction
    Freq. (MHz)3,400 ~ 3,600
    Gain (dB)17
  • IE27330P

    GaN on SiC Transistors

    IE27330P

    Description

    RFHIC’s IE27330P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    79.0W
    Gain
    15dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)15
  • IE26110P

    GaN on SiC Transistors

    IE26110P

    Description

    RFHIC’s IE26110P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at ...

    Frequency
    2,500 ~ 2,690MHz
    Output Power
    25.0W
    Gain
    19dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,500 ~ 2,690
    Gain (dB)19
  • IE21085P

    GaN on SiC Transistors

    IE21085P

    Description

    RFHIC’s IE21085P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21085P delivers 85 W of saturated power at ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    19.0W
    Gain
    21dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)21
  • IE36220W

    GaN on SiC Transistors

    IE36220W

    Description

    RFHIC’s IE36220W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at ...

    Frequency
    3,480 ~ 3,520MHz
    Output Power
    50.0W
    Gain
    15dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)3,480 ~ 3,520
    Gain (dB)15
  • RT12055P

    GaN on SiC Transistors

    RT12055P

    Description

    RFHIC’s RT12055P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 0 to 6000 MHz. The RT12055P delivers 55 W of saturated power at ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    12.6W
    Gain
    16dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • RT12028P

    GaN on SiC Transistors

    RT12028P

    Description

    RFHIC’s RT12028P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 0 to 6000 MHz. The RT12028P delivers 28 W of saturated power at ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6.3W
    Gain
    18dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)18
  • IE08165P

    GaN on SiC Transistors

    IE08165P

    Description

    RFHIC’s IE08165P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at ...

    Frequency
    770 ~ 900MHz
    Output Power
    37.0W
    Gain
    21dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)770 ~ 900
    Gain (dB)21
  • IE36110W

    GaN on SiC Transistors

    IE36110W

    Description

    RFHIC’s IE36110W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at ...

    Frequency
    3,400 ~ 3,600MHz
    Output Power
    25.0W
    Gain
    17dB
    Efficiency
    65%
    StatusProduction
    Freq. (MHz)3,400 ~ 3,600
    Gain (dB)17
  • Category