At RFHIC we offer a broad portfolio of GaN and GaAs MMICs designed for high-frequency radio, Satellite Communication (Satcom), Datalink and various radar applications. Our high performing MMICs provides design
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Description
RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 ...
Frequency30 ~ 1,000MHzOutput Power0.3WGain18dBFreq. (MHz)30 ~ 1,000
Gain (dB)18 -
Description
RFHIC’s ACQ102 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 1000 ...
Frequency30 ~ 1,000MHzOutput Power0.1WGain22dBFreq. (MHz)30 ~ 1,000
Gain (dB)22 -
Description
RFHIC’s ACQ624 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for optical node, RFoG, and FTTH (GPON, GEPON) applications. Covering from 50 ...
Frequency50 ~ 870MHzOutput Power0.2WGain35dBFreq. (MHz)50 ~ 870
Gain (dB)35 -
Description
RFHIC’s ACQ629 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 50 to 1000 ...
Frequency50 ~ 1,000MHzOutput Power0.2WGain38dBFreq. (MHz)50 ~ 1,000
Gain (dB)38 -
Description
RFHIC’s AE305 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 30 to ...
Frequency30 ~ 2,650MHzOutput Power0.2WGain15dBFreq. (MHz)30 ~ 2,650
Gain (dB)15 -
Description
RFHIC’s AE308 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 50 to ...
Frequency50 ~ 1,000MHzOutput Power0.1WGain22dBFreq. (MHz)50 ~ 1,000
Gain (dB)22 -
Description
RFHIC’s AE312 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2700 ...
Frequency30 ~ 2,655MHzOutput Power0.1WGain20dBFreq. (MHz)30 ~ 2,655
Gain (dB)20 -
Description
RFHIC’s AE314 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2700 ...
Frequency30 ~ 3,000MHzOutput Power0.1WGain23dBFreq. (MHz)30 ~ 3,000
Gain (dB)23 -
Description
RFHIC’s AE342A is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1100 ...
Frequency5 ~ 1,100MHzOutput Power0.1WGain17dBFreq. (MHz)5 ~ 1,100
Gain (dB)17 -
Description
RFHIC’s AE417 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 5 to ...
Frequency5 ~ 1,100MHzOutput Power0.3WGain16dBFreq. (MHz)5 ~ 1,100
Gain (dB)16 -
Description
RFHIC’s AE427 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2200 ...
Frequency5 ~ 1,000MHzOutput Power0.3WGain25dBFreq. (MHz)5 ~ 1,000
Gain (dB)25 -
Description
RFHIC’s AE505 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV, repeater, and base station systems. Covering from 30 to 2650 ...
Frequency30 ~ 2,650MHzOutput Power0.3WGain14dBFreq. (MHz)30 ~ 2,650
Gain (dB)14 -
Description
RFHIC’s AE362 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 ...
Frequency30 ~ 4,000MHzOutput Power0.1WGain15dBFreq. (MHz)30 ~ 4,000
Gain (dB)15 -
Description
RFHIC’s AE366 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 ...
Frequency30 ~ 2,200MHzOutput Power0.2WGain23dBFreq. (MHz)30 ~ 2,200
Gain (dB)23 -
Description
RFHIC’s AE367 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 50 ...
Frequency50 ~ 3,500MHzOutput Power0.5WGain16dBFreq. (MHz)50 ~ 3,500
Gain (dB)16 -
Description
RFHIC’s AE410 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 ...
Frequency30 ~ 3,000MHzOutput Power0.1WGain20dBFreq. (MHz)30 ~ 3,000
Gain (dB)20 -
Description
RFHIC’s AP205A is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and codedivision multiple access (DMA) applications. Operating from 50 to 3500 MHz, the AP205A ...
Frequency50 ~ 3,000MHzOutput Power0.2WGain14dBFreq. (MHz)50 ~ 3,000
Gain (dB)14 -
Description
RFHIC’s AP209 is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and codedivision multiple access (DMA) applications. Operating from 50 to 3500 MHz, the AP209 ...
Frequency50 ~ 3,000MHzOutput Power0.3WGain14dBFreq. (MHz)50 ~ 3,000
Gain (dB)14 -
Description
RFHIC’s AE608 is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 10 to 4000 MHz, the AE608 ...
Frequency10 ~ 4,000MHzOutput Power0.0WGain14dBFreq. (MHz)10 ~ 4,000
Gain (dB)14 -
Description
RFHIC’s AE379 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed ideally for RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE379 provides ...
Frequency50 ~ 3,500MHzOutput Power0.2WGain12dBFreq. (MHz)50 ~ 3,500
Gain (dB)12 -
Description
RFHIC’s AE368 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed ideally for satellite systems, RFID, and femtocell applications. Operating from 50 to 3500 MHz, the ...
Frequency50 ~ 3,500MHzOutput Power1.1WGain14dBFreq. (MHz)50 ~ 3,500
Gain (dB)14 -
Description
RFHIC’s AE510 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV, cable modem, and FTTH (GPON, GEPON) applications. Covering from 30 ...
Frequency30 ~ 3,000MHzOutput Power0.2WGain19dBFreq. (MHz)30 ~ 3,000
Gain (dB)19 -
Description
RFHIC’s AE512 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV, cable modem, and FTTH (GPON, GEPON) applications. Covering from 30 ...
Frequency30 ~ 2,150MHzOutput Power0.1WGain17dBFreq. (MHz)30 ~ 2,150
Gain (dB)17 -
Description
RFHIC’s AE607 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 ...
Frequency5 ~ 1,500MHzOutput Power0.6WGain13dBFreq. (MHz)5 ~ 1,500
Gain (dB)13 -
Description
RFHIC’s AE617 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to ...
Frequency5 ~ 1,000MHzOutput Power0.6WGain22dBFreq. (MHz)5 ~ 1,000
Gain (dB)22 -
Description
RFHIC’s AE618 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1300 ...
Frequency30 ~ 1,000MHzOutput Power1.6WGain20dBFreq. (MHz)30 ~ 1,000
Gain (dB)20 -
Description
RFHIC’s AD412 is a cost-efficient 75 Ohm GaAs E-phigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) active divider designed for multi-tuner set-top boxes, home gateways, and FTTH (G-PON, GE-PON) applications. Covering ...
Frequency30 ~ 1,000MHzGain6dBFreq. (MHz)30 ~ 1,000
Gain (dB)6 -
Description
RFHIC’s AD311 is a cost-efficient 75 Ohm GaAs E-phigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) active divider designed for multi-tuner set-top boxes, home gateways, and FTTH (G-PON, GE-PON) applications. Covering ...
Frequency30 ~ 2,200MHzGain8dBFreq. (MHz)30 ~ 2,200
Gain (dB)8 -
Description
RFHIC’s AD274 is a cost-efficient 75 Ohm GaAs E-phigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) active divider designed for multi-tuner set-top boxes, home gateways, and FTTH (G-PON, GE-PON) applications. Covering ...
Frequency30 ~ 1,200MHzGain6dBFreq. (MHz)30 ~ 1,200
Gain (dB)6 -
Description
RFHIC’s AD254 is a cost-efficient 75 Ohm GaAs E-phigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) active divider designed for multi-tuner set-top boxes, home gateways, and FTTH (G-PON, GE-PON) applications. Covering ...
Frequency30 ~ 1,200MHzGain5dBFreq. (MHz)30 ~ 1,200
Gain (dB)5 -
Description
RFHIC’s AD211 is a cost-efficient 75 Ohm GaAs E-phigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) active divider designed for multi-tuner set-top boxes, home gateways, and FTTH (G-PON, GE-PON) applications. Covering ...
Frequency30 ~ 2,200MHzGain8dBFreq. (MHz)30 ~ 2,200
Gain (dB)8