table view - GaN MMICs

GaN MMICs

At RFHIC we offer a wide range of Gallium Nitride (GaN) MMICs designed for 5G, Satellite Communication (SATCOM), Weather Radar, Marine Radar, and Datalink applications. Our advanced GaN High Electron Mobility Transistor (HEMT) process ensures that our GaN MMICs have high linearity, breakdown voltage, power density, and most importantly excellent efficiency. Our GaN MMICs are designed with DC blocking capacitors for smaller footprint and easier system build integration. We offer GaN MMICs as a discrete die, packaged type and or module type to provide our customers with the best possible solutions for their most demanding applications.

Part Number	Frequency(MHz)	Output power(W)	Gain(dB)	Efficiency(%)	Status	Data Sheet
GM09010035D	9000 ~ 10000	35	18		Production
GM13514510D	14000 ~ 14500	10	17		Production

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GaN MMICs

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