At RFHIC we offer industry leading GaN power amplifier (PA) solutions across multiple power levels and frequency ranges. Our state-of-the-art GaN power amplifiers are utilized in commercial teleco infrastructure and
At RFHIC we offer industry leading GaN power amplifier (PA) solutions across multiple power levels and frequency ranges. Our state-of-the-art GaN power amplifiers are utilized in commercial teleco infrastructure and a variety of ground and sea radar systems globally. RFHIC’s cutting edge GaN technologies will enable users to reach next generation performance in power, size, and reliability.
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Description
RFHIC’s RRP9397400-56A is a 400W, X-band, Pulse gallium-nitride (GaN) solid-state power amplifier designed for naval, surveillance, air traffic control, and weather radar system applications. The RRP9397400-56A is operable from 9.3 ...
Frequency9,300 ~ 9,700MHzOutput Power400.0WGain54dBEfficiency25%StatusProduction
Freq. (MHz)9,300 ~ 9,700
Gain (dB)54 -
Description
RFHIC’s HR3135-10A is a fully integrated 10W, S-band gallium-nitride (GaN) transmit and receive module designed for next-generation commercial and defense phased array radar systems. The HR3135-10A has a pulse width ...
Frequency3,100 ~ 3,500MHzEfficiency45%StatusSample available
Freq. (MHz)3,100 ~ 3,500 -
Description
RFHIC’s RRP27311K0-22 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP27311K0-22 operates at 2700 to 3100 MHz (S-band), with pulsed output powers ...
Frequency2,700 ~ 3,100MHzOutput Power1,000.0WGain22dBEfficiency45%StatusSample available
Freq. (MHz)2,700 ~ 3,100
Gain (dB)22 -
Description
RFHIC’s RRP5259600-39 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP5259600-39 operates at 5200 to 5900 MHz (C-band), with pulsed output powers ...
Frequency5,200 ~ 5,900MHzOutput Power600.0WGain39dBEfficiency33%StatusSample availableFreq. (MHz)5,200 ~ 5,900
Gain (dB)39 -
Description
The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). ...
Frequency2,400 ~ 2,500MHzOutput Power1,600.0WGain60dBEfficiency55%StatusSample available
Freq. (MHz)2,400 ~ 2,500
Gain (dB)60 -
Description
The RRM9397800-59A is a 800W, X-band gallium-nitride (GaN) solid-state power amplifier designed for weather radar, maritime radar, surveillance radar, and SAR applications. The RRM9397800-59A is operable from 9300 to 9700 ...
Frequency9,300 ~ 9,700MHzOutput Power800.0WGain59dBEfficiency20%StatusSample available
Freq. (MHz)9,300 ~ 9,700
Gain (dB)59 -
Description
RFHIC’s RRP9395080-50 is an 80W, X-band, GaN solid-state power amplifier designed for radar, satellite, and space applications. The RRP9395080-50 provides a minimum continuous wave (CW) output power of 80W operable ...
Frequency9,300 ~ 9,500MHzOutput Power80.0WGain50dBEfficiency25%StatusSample available
Freq. (MHz)9,300 ~ 9,500
Gain (dB)50 -
Description
RFHIC’s RWP2060050-48 is a 65W gallium-nitride (GaN) Wideband Power Amplifier designed for EW applications. Operable at 2 to 6 GHz and is 50 Ohms fully matched for easy design integration. ...
Frequency2,000 ~ 6,000MHzOutput Power65.0WEfficiency25%StatusSample available
Freq. (MHz)2,000 ~ 6,000 -
Description
RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride ...
Frequency900 ~ 930MHzOutput Power800.0WGaindBEfficiency65%StatusProduction
Freq. (MHz)900 ~ 930
Gain (dB) -
Description
RFHIC’s RRP54592K4-24 is a 2400w, C-band, solid-state pulse pallet amp fabricated with RFHIC’s cutting GaN on SiC HEMT technology. The RRP54592K4-24 is designed ideally for various radar applications. The RRP54592K4-24 ...
Frequency5,400 ~ 5,900MHzOutput Power2,400.0WGain24dBEfficiency30%StatusSample available
Freq. (MHz)5,400 ~ 5,900
Gain (dB)24 -
Description
RFHIC’s HR2730-10A is a 15W, S-band, gallium-nitride (GaN) Front-End Module (FEM) designed for next-generation digital beamforming phased array radar applications. The HR2730-10A provides a 10% duty cycle and pulse width ...
Frequency2,700 ~ 3,000MHzEfficiency45%StatusSample available
Freq. (MHz)2,700 ~ 3,000 -
Description
RFHIC’s RTP0710050-10 is a unique GaN-SiC wideband power amplifier that powers 47dBm over a bandwidth of 700~1000MHz.This GaN wideband power amplifier has been specifically developed for communication system and other ...
Frequency700 ~ 1,000MHzOutput Power50.0WGain15dBEfficiency25%StatusSample available
Freq. (MHz)700 ~ 1,000
Gain (dB)15 -
Description
RFHIC’s RRP27371K5-30 is a 1.5kW, gallium-nitride (GaN) solid-state pulsed power amplifier operating at 2700 to 3700 MHz. This gallium-nitride (GaN) SSPA provides an ultra wide bandwidth of 1000 MHz with ...
Frequency2,700 ~ 3,700MHzOutput Power1,500.0WGain31dBEfficiency37%StatusSample availableFreq. (MHz)2,700 ~ 3,700
Gain (dB)31 -
Description
RFHIC’s RRP52591K2-42 is an ultra-wide-band, pulsed gallium-nitride (GaN) solid-state power amplifier designed for weather, maritime, and surveillance radar transmitters. The RRP52591K2-42 provides 1,260W of pulsed power operating at 5200 to ...
Frequency5,200 ~ 5,900MHzOutput Power1,260.0WGain42dBEfficiency35%StatusSample available
Freq. (MHz)5,200 ~ 5,900
Gain (dB)42 -
Description
The RIH25030-20 is a GaN Hybrid power amplifier module designed for Industrial, Scientific, Medical (ISM) and Jamming applications at 2450MHz. RIH Series is an suitable for use in CW, pulse ...
Frequency2,400 ~ 2,500MHzOutput Power30.0WGain16dBEfficiency70%StatusSample available
Freq. (MHz)2,400 ~ 2,500
Gain (dB)16 -
Description
RFHIC’s RIM132K0-20 is a 2kW gallium-nitride (GaN) SiC solid-state power amplifier designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. Fabricated with RFHIC’s state of the ...
Frequency1,295 ~ 1,305MHzOutput Power2,000.0WGaindBEfficiency65%StatusSample available
Freq. (MHz)1,295 ~ 1,305
Gain (dB) -
Description
The RRM851A90-36C uses GaN on SiC HEMT MMIC technology which performs high breakdown voltage and high efficiency
The RRM851A90-36C is designed for Weather and Marine Radar, Point to Point or ...Frequency8,500 ~ 9,500MHzOutput Power100.0WGain43dBEfficiency33%StatusSample availableFreq. (MHz)8,500 ~ 9,500
Gain (dB)43 -
Description
The RNP58200-10 uses GaN on SiC HEMT technology which performs high breakdown voltage and high efficiency.
This product is able to control its RF power and monitoring FWD and RVS ...Frequency5,725 ~ 5,873MHzOutput Power200.0WGain40dBEfficiency35%StatusSample available
Freq. (MHz)5,725 ~ 5,873
Gain (dB)40 -
Description
RFHIC’s RRM9397200-56A is a 200W, gallium-nitride (GaN) Pulse Amplifier Module designed ideally for weather and maritime radar applications. Operable at 9300 to 9700 MHz (X-band) and is 50 Ohms fully ...
Frequency9,300 ~ 9,700MHzOutput Power200.0WStatusSample available
Freq. (MHz)9,300 ~ 9,700 -
Description
RFHIC’s RRM8894010-MID is a 10W, X Band gallium-nitride (GaN) transmit and receive Module designed ideally for next-generation active electronically scanned array radar systems. Operable at 8.8 to 9.4 GHz, (X-band) ...
Frequency8,800 ~ 9,400MHzOutput Power10.0WStatusSample available
Freq. (MHz)8,800 ~ 9,400 -
Description
RFHIC’s RWP2060080-50 is a 100W, gallium-nitride (GaN) Wideband Power amplifier designed for various electronic warfare applications. This gallium-nitride (GaN) wideband amplifier operates from 2000 to 6000 MHz and offers high ...
Frequency2,000 ~ 6,000MHzOutput Power100.0WGaindBEfficiency22%StatusSample available
Freq. (MHz)2,000 ~ 6,000
Pout (W)100
Gain (dB) -
Description
RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors i designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This ...
Frequency900 ~ 930MHzOutput Power2,000.0WGain56dBEfficiency63%StatusProduction
Freq. (MHz)900 ~ 930
Gain (dB)56 -
Description
RFHIC”s WL2215-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2215-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzOutput PowerWGain15dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
RFHIC”s WL2208-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2208-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzOutput PowerWGain15dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
RFHIC”s WL1008-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1008-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzOutput PowerWGain16dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WL1015-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1015-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzOutput PowerWGain16dBEfficiency%StatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WLP0640 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 20 to 520 MHz, the WLP0640 yields a high gain of 19.5 with ...
Frequency20 ~ 520MHzOutput PowerWGain20dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)20 -
Description
RFHIC”s WL2205-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 30 to 2200 MHz the WL2205-L yields a high gain of 15.5 with ...
Frequency30 ~ 2,200MHzOutput PowerWGain16dBEfficiency%StatusProduction
Freq. (MHz)30 ~ 2,200
Gain (dB)16 -
Description
RFHIC”s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with ...
Frequency1 ~ 520MHzOutput PowerWGain23dBEfficiency%StatusProduction
Freq. (MHz)1 ~ 520
Gain (dB)23 -
Description
The RSP4459030-17A is designed for Communication system application frequencies from 4.4 ~ 5.9 GHz. This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and ...
Frequency4,400 ~ 5,900MHzGain13dBStatusProduction
Freq. (MHz)4,400 ~ 5,900
Gain (dB)13 -
Description
RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a ...
Frequency20 ~ 520MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)42 -
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a ...
Frequency20 ~ 512MHzOutput Power40.0WGain44dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 512
Gain (dB)44 -
Description
RFHIC’s LCL3322-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 2700 to 3800 MHz, the LCL3322-L provides 21dB of gain and P1dB of 27dBm, while supporting ...
Frequency2,700 ~ 3,800MHzOutput PowerWGain21dBEfficiency%StatusProduction
Freq. (MHz)2,700 ~ 3,800
Gain (dB)21 -
Description
RFHIC’s CL2102D-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1750 to 2600 MHz, the CL2102D-L provides 14.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,750 ~ 2,600MHzOutput PowerWGain15dBEfficiency%StatusProduction
Freq. (MHz)1,750 ~ 2,600
Gain (dB)15 -
Description
RFHIC’s CL1302D-L is an L-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 1200 to 1400 MHz, the CL1302D-L provides 18dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,200 ~ 1,400MHzOutput PowerWGain18dBEfficiency%StatusProduction
Freq. (MHz)1,200 ~ 1,400
Gain (dB)18 -
Description
RFHIC’s CL3102D-L is an S-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 2700 to 3500 MHz, the CL3102D-L provides 11.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency2,700 ~ 3,500MHzOutput PowerWGain12dBEfficiency%StatusProduction
Freq. (MHz)2,700 ~ 3,500
Gain (dB)12 -
Description
RFHIC’s RRM9395200-56 is a 200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 9300 to 9500 MHz, the RRM9395200-56 achieves 56 dB of gain with an ...
Frequency9,300 ~ 9,500MHzOutput Power200.0WGain56dBEfficiency20%StatusProduction
Freq. (MHz)9,300 ~ 9,500
Gain (dB)56 -
Description
RFHIC’s RRP54591K3-43 is a C-band, gallium-nitride (GaN) Pulse amplifier designed for Radar system applications. The RRP54591K3-43 is operable from 5.4 to 5.9 GHz and has an output pulse power of ...
Frequency5,400 ~ 5,899MHzOutput Power1,200.0WGain43dBEfficiency35%StatusSample available
Freq. (MHz)5,400 ~ 5,899
Gain (dB)43 -
Description
RFHIC’s RWP03160-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a ...
Frequency20 ~ 500MHzOutput Power159.0WGain43dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)43 -
Description
RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
...Frequency20 ~ 512MHzOutput Power20.0WGain41dBEfficiency%StatusSample available
Freq. (MHz)20 ~ 512
Gain (dB)41 -
Description
RFHIC’s RNP24550-21 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 55% and is capable of both CW ...
Frequency2,400 ~ 2,500MHzOutput Power550.0WGain43dBEfficiency55%StatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)43 -
Description
RFHIC’s RFM245-10 is a 100 W, RF CW gallium-nitride (GaN) solid-state power amplifier (SSPA)generator ideally designed for medical equipment applications. It has a drain efficiency of 37% and is capable ...
Frequency2,400 ~ 2,500MHzOutput Power100.0WEfficiency37%StatusSample available
Freq. (MHz)2,400 ~ 2,500 -
Description
RFHIC’s RYP24200-20S is a 200 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW ...
Frequency2,400 ~ 2,500MHzOutput Power200.0WGain28dBEfficiency68%StatusObsolete
Freq. (MHz)2,400 ~ 2,500
Gain (dB)28 -
Description
RFHIC’s RCP25400-20L is a 400 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 63% and is capable of both CW ...
Frequency2,400 ~ 2,500MHzOutput Power400.0WGain13dBEfficiency63%StatusSample available
Freq. (MHz)2,400 ~ 2,500
Gain (dB)13 -
Description
RFHIC’s RIM091K1-20 is a 1kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...
Frequency900 ~ 930MHzOutput Power1,100.0WGain50dBEfficiency63%StatusSample available
Freq. (MHz)900 ~ 930
Gain (dB)50 -
Description
RFHIC’s RIM091K5-20 is a 1.5kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...
Frequency900 ~ 930MHzOutput Power1,500.0WGain52dBEfficiency63%StatusSample available
Freq. (MHz)900 ~ 930
Gain (dB)52 -
Description
RFHIC’s RNP09550-20 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW ...
Frequency910 ~ 920MHzOutput Power550.0WGain60dBEfficiency66%StatusSample available
Freq. (MHz)910 ~ 920
Gain (dB)60 -
Description
RFHIC’s RNP21040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 ...
Frequency2,100 ~ 2,170MHzOutput Power56.0WGain33dBEfficiency%StatusProduction
Freq. (MHz)2,100 ~ 2,170
Gain (dB)33
