At RFHIC we offer industry leading GaN power amplifier (PA) solutions across multiple power levels and frequency ranges. Our state-of-the-art GaN power amplifiers are utilized in commercial teleco infrastructure and
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Description
RFHIC’s RIM132K0-20 is a 2kW gallium-nitride (GaN) SiC solid-state power amplifier designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. Fabricated with RFHIC’s state of the ...
Frequency1,295 ~ 1,305MHzOutput Power2,000.0WEfficiency65%StatusSample available
Freq. (MHz)1,295 ~ 1,305RFHIC's RIM132K0-20 is a 2kW gallium-nitride (GaN) SiC solid-state power amplifier designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. Fabricated with RFHIC's state of the art gallium-nitride (GaN) high-electron-mobility (HEMT)s, this solid-state amplifier provides users with 65% drain efficiency, operating from 50V DC supply. This power amplifier provides excellent thermal stability and ruggedness and is fully matched to 50 Ohms. This SWaP-C SSPA is an ideal replacement for legacy tube-based systems, offering better reliability without the need for high voltage power supply. Lead-free and RoHS compliant. Custom designs are available upon request. -
Description
RFHIC’s RNP58200-C2 is a 200W gallium-nitride (GaN) Solid-State Power Amplifier (SSPA) designed ideally for industrial, medical, and scientific applications. Operable at 5725-5875 MHz fabricated with our gallium-nitride gallium-nitride (GaN) on ...
Frequency5,725 ~ 5,875MHzOutput Power53.0WGain30dBEfficiency31%StatusSample available
Freq. (MHz)5,725 ~ 5,875
Gain (dB)30RFHIC's RNP58200-C2 is a 200W gallium-nitride (GaN) Solid-State Power Amplifier (SSPA) designed ideally for industrial, medical, and scientific applications. Operable at 5725-5875 MHz fabricated with our gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT)s. This compact gallium-nitride (GaN) power amplifier provides a power-added efficiency of 31% at 40V and a typical power gain of 30dB. Custom designs are available upon request. -
Description
RFHIC’s RRM9397200-56A is a 200W, gallium-nitride (GaN) Pulse Amplifier Module designed ideally for weather and maritime radar applications. Operable at 9300 to 9700 MHz (X-band) and is 50 Ohms fully ...
Frequency9,300 ~ 9,700MHzOutput Power200.0WStatusSample available
Freq. (MHz)9,300 ~ 9,700RFHIC's RRM9397200-56A is a 200W, gallium-nitride (GaN) Pulse Amplifier Module designed ideally for weather and maritime radar applications. Operable at 9300 to 9700 MHz (X-band) and is 50 Ohms fully matched for simple design integration. The RRM9397200-56A pulse amplifier is built using RFHIC's state of the art gallium-nitride (GaN) high-electron-mobility (HEMT)s providing excellent thermal stability and efficiency. Lead-free and RoHS compliant. Custom designs are available upon request. -
Description
RFHIC’s RRM8894010-MID is a 10W, X Band gallium-nitride (GaN) transmit and receive Module designed ideally for next-generation active electronically scanned array radar systems. Operable at 8.8 to 9.4 GHz, (X-band) ...
Frequency8,800 ~ 9,400MHzOutput Power10.0WStatusSample available
Freq. (MHz)8,800 ~ 9,400RFHIC's RRM8894010-MID is a 10W, X Band gallium-nitride (GaN) transmit and receive Module designed ideally for next-generation active electronically scanned array radar systems. Operable at 8.8 to 9.4 GHz, (X-band) and is 50 Ohms fully matched for simple design integration. The RRM8894010-MID provides key features such as noise immunity and range extension for SPI Bus using LVDS interface. A 6BIT phase and attenuation control and a low noise figure resulting in a precise and accurate receive signal. Lead-free and RoHS compliant. Custom designs are available upon request. ITAR Free -
Description
RFHIC’s RRP9397400-56A is a 400W, X-band, Pulse gallium-nitride (GaN) solid-state power amplifier designed for naval, surveillance, air traffic control, and weather radar system applications. The RRP9397400-56A is operable from 9.3 ...
Frequency9,300 ~ 9,700MHzOutput Power400.0WStatusProduction
Freq. (MHz)9,300 ~ 9,700RFHIC’s RRP9397400-56A is a 400W, X-band, Pulse gallium-nitride (GaN) solid-state power amplifier designed for naval, surveillance, air traffic control, and weather radar system applications. The RRP9397400-56A is operable from 9.3 to 9.7 GHz and has an output pulse power of 400W, with a duty cycle of 10%. The amplifier is fabricated using RFHIC’s cutting edge gallium-nitride (GaN) high-electron-mobility (HEMT) technology, providing higher breakdown voltage, wider bandwidth, and high efficiency. The amplifier is 50 Ohms fully matched simplifying system integration. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s HR3135-10A is a fully integrated 10W, S-band gallium-nitride (GaN) transmit and receive module designed for next-generation commercial and defense phased array radar systems. The HR3135-10A has a pulse width ...
Frequency3,100 ~ 3,500MHzEfficiency45%StatusSample available
Freq. (MHz)3,100 ~ 3,500RFHIC's HR3135-10A is a fully integrated 10W, S-band gallium-nitride (GaN) transmit and receive module designed for next-generation commercial and defense phased array radar systems. The HR3135-10A has a pulse width of 100 us with a duty cycle up to 10%. The GaN transmit and receive module has a TX input power of 20 dBm with a typical efficiency of 45%. RFHIC's new GaN TR delivers the power density, reliability, and compact size needed for next-generation S-band radar and surveillance platforms. Lead-free and RoHS compliant. -
Description
RFHIC’s RRP27311K0-24 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP27311K0-24 operates at 2700 to 3100 MHz (S-band), with pulsed output powers ...
Frequency2,700 ~ 3,100MHzOutput Power1,000.0WEfficiency45%StatusSample available
Freq. (MHz)2,700 ~ 3,100RFHIC's RRP27311K0-24 is a pulsed pallet amplifier built with RFHIC's state of the art gallium-nitride (GaN) HEMTs. The RRP27311K0-24 operates at 2700 to 3100 MHz (S-band), with pulsed output powers up to 1000W. The power amplifier delivers a duty cycle up to 10% with an efficiency of 45%. This compact power amplifier is fully matched to 50 Ohms providing simpler system integration. Lead-free and RoHS compliant. -
Description
RFHIC’s RRP5259600-39 is a pulsed pallet amplifier built with RFHIC’s state of the art gallium-nitride (GaN) HEMTs. The RRP5259600-39 operates at 5200 to 5900 MHz (C-band), with pulsed output powers ...
Frequency5,200 ~ 5,900MHzOutput Power600.0WGain39dBEfficiency33%StatusSample available
Freq. (MHz)5,200 ~ 5,900
Gain (dB)39RFHIC's RRP5259600-39 is a pulsed pallet amplifier built with RFHIC's state of the art gallium-nitride (GaN) HEMTs. The RRP5259600-39 operates at 5200 to 5900 MHz (C-band), with pulsed output powers up to 600W. The power amplifier delivers a duty cycle of up to 10% with an efficiency of 33%. This compact power amplifier provides high breakdown voltage and excellent stability. Lead-free and RoHS compliant. -
Description
RFHIC’s RWP2060050-48 is a 65W gallium-nitride (GaN) Wideband Power Amplifier designed for EW applications. Operable at 2 to 6 GHz and is 50 Ohms fully matched for easy design integration. ...
Frequency2,000 ~ 6,000MHzOutput Power65.0WEfficiency25%StatusSample available
Freq. (MHz)2,000 ~ 6,000RFHIC's RWP2060050-48 is a 65W gallium-nitride (GaN) Wideband Power Amplifier designed for EW applications. Operable at 2 to 6 GHz and is 50 Ohms fully matched for easy design integration. The gallium-nitride (GaN) Wideband amplifier is built using RFHIC's state of the art gallium-nitride (GaN) SiC transistors providing industry-leading size, weight, and power (SWaP) for unparalleled performance. Lead-free and RoHS compliant. Custom designs are available upon request. -
Description
RFHIC’s HR2730-10A is a 15W, S-band, gallium-nitride (GaN) Front-End Module (FEM) designed for next-generation digital beamforming phased array radar applications. The HR2730-10A provides a 10% duty cycle and pulse width ...
Frequency2,700 ~ 3,000MHzEfficiency45%StatusSample available
Freq. (MHz)2,700 ~ 3,000RFHIC's HR2730-10A is a 15W, S-band, gallium-nitride (GaN) Front-End Module (FEM) designed for next-generation digital beamforming phased array radar applications. The HR2730-10A provides a 10% duty cycle and pulse width up to 100us. The HR2730-10A consists of one transmitter providing a minimum power of 15W and two selectable receivers (main, bypass) with a noise figure of less than 3.2dB. The module is packaged in a compact SMD type package with a size of 24 mm x 14mm x 3.9mm and a weight of 2.5 grams. The module is fully RF input, and output matched and provides an efficiency of 45% at 50V. Lead-free and RoHS compliant. Custom designs are available upon request. -
Description
RFHIC’s RRP27371K5-30 is a 1.5kW, gallium-nitride (GaN) solid-state pulsed power amplifier operating at 2700 to 3700 MHz. This gallium-nitride (GaN) SSPA provides an ultra wide bandwidth of 1000 MHz with ...
Frequency2,700 ~ 3,700MHzOutput Power1,500.0WGain31dBEfficiency37%StatusSample availableFreq. (MHz)2,700 ~ 3,700
Gain (dB)31RFHIC's RRP27371K5-30 is a 1.5kW, gallium-nitride (GaN) solid-state pulsed power amplifier operating at 2700 to 3700 MHz. This gallium-nitride (GaN) SSPA provides an ultra wide bandwidth of 1000 MHz with a power gain of 30.7 dB and an efficiency of 37%. The RRP27371K5-30 is ideally designed for next generation maritime, surveillance, and weather radar applications. This highly efficient power amplifier is fabricated using RFHIC's cutting edge gallium-nitride (GaN) high-electron-mobility (HEMT)s providing excellent thermal stability and small form factor. Lead-free and RoHS compliant. Custom designs are available upon request. -
Description
RFHIC’s RRP52591K2-42 is an ultra-wide-band, pulsed gallium-nitride (GaN) solid-state power amplifier designed for weather, maritime, and surveillance radar transmitters. The RRP52591K2-42 provides 1,260W of pulsed power operating at 5200 to ...
Frequency5,200 ~ 5,900MHzOutput Power1,260.0WGain42dBEfficiency35%StatusSample available
Freq. (MHz)5,200 ~ 5,900
Gain (dB)42RFHIC's RRP52591K2-42 is an ultra-wide-band, pulsed gallium-nitride (GaN) solid-state power amplifier designed for weather, maritime, and surveillance radar transmitters. The RRP52591K2-42 provides 1,260W of pulsed power operating at 5200 to 5900 MHz (C-band) using the industry's best in class gallium-nitride (GaN) high-electron-mobility (HEMT)s. Featuring 42 dB of gain and 10% duty cycle at 100 us. This amplifier provides an exceptional efficiency of 35% with a minimum harmonic of -40 and spurious better than -60 dBc. Lead-free and RoHS compliant. Custom designs are available upon request. -
Description
RFHIC’s RWP2060080-50 is a 100W, gallium-nitride (GaN) Wideband Power amplifier designed for various electronic warfare applications. This gallium-nitride (GaN) wideband amplifier operates from 2000 to 6000 MHz and offers high ...
Frequency2,000 ~ 6,000MHzOutput Power100.0WEfficiency22%StatusSample available
Freq. (MHz)2,000 ~ 6,000
Pout (W)100RFHIC's RWP2060080-50 is a 100W, gallium-nitride (GaN) Wideband Power amplifier designed for various electronic warfare applications. This gallium-nitride (GaN) wideband amplifier operates from 2000 to 6000 MHz and offers high reliability and ruggedness. The RWP2060080-50 is fabricated using RFHIC's state of the art gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistors providing the industry's best size, weight, and power (SWaP) wideband amplifier. Lead-free and RoHS compliant. Custom designs are available upon request. -
Description
RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This ...
Frequency900 ~ 930MHzOutput Power2,000.0WEfficiency63%StatusProduction
Freq. (MHz)900 ~ 930RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems. -
Description
RFHIC”s WL2215-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2215-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzGain15dBStatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15RFHIC"s WL2215-L is a GaAs hybrid low noise amplifier designed using RFHIC's E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2215-L yields a high gain of 15 with 35 dBm OIP3 levels. The WL2215-L is packaged in a hybrid surface mount (SMD), and no matching circuit required. The device is ideally suited for MILCOM and defense jammer applications. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC”s WL2208-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2208-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzGain15dBStatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15RFHIC"s WL2208-L is a GaAs hybrid low noise amplifier designed using RFHIC's E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2208-L yields a high gain of 15 with 31 dBm OIP3 levels. The WL2208-L is packaged in a hybrid surface mount (SMD), and no matching circuit required. The device is ideally suited for MILCOM and defense jammer applications. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC”s WL1008-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1008-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzGain16dBStatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16RFHIC"s WL1008-L is a GaAs hybrid low noise amplifier designed using RFHIC's E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1008-L yields a high gain of 16 with 31 dBm OIP3 levels.TheWL1008-L is packaged in a hybrid surface mount (SMD), and no matching circuit required. The device is ideally suited for MILCOM and defense jammer applications. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC”s WL1015-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1015-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzGain16dBStatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16RFHIC"s WL1015-L is a GaAs hybrid low noise amplifier designed using RFHIC's E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1015-L yields a high gain of 16 with 35 dBm OIP3 levels.TheWL1015-L is packaged in a hybrid surface mount (SMD), and no matching circuit required. The device is ideally suited for MILCOM and defense jammer applications. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC”s WLP0640 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 20 to 520 MHz, the WLP0640 yields a high gain of 19.5 with ...
Frequency20 ~ 520MHzGain20dBStatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)20RFHIC"s WLP0640 is a GaAs hybrid low noise amplifier designed using RFHIC's E-phigh-electron-mobility (HEMT) process. Operating from 20 to 520 MHz, the WLP0640 yields a high gain of 19.5 with 43 dBm OIP3 levels.TheWLP0640 is packaged in a hybrid surface mount (SMD), and no matching circuit required. The device is ideally suited for MILCOM and defense jammer applications. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC”s WL2205-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 30 to 2200 MHz the WL2205-L yields a high gain of 15.5 with ...
Frequency30 ~ 2,200MHzGain16dBStatusProduction
Freq. (MHz)30 ~ 2,200
Gain (dB)16RFHIC"s WL2205-L is a GaAs hybrid low noise amplifier designed using RFHIC's E-phigh-electron-mobility (HEMT) process. Operating from 30 to 2200 MHz the WL2205-L yields a high gain of 15.5 with 26 dBm OIP3 levels.TheWL2205-L is packaged in a hybrid surface mount (SMD) and no matching circuit required. The device is idally suited for MILCOM and defense jammer applications. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC”s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with ...
Frequency1 ~ 520MHzGain23dBStatusProduction
Freq. (MHz)1 ~ 520
Gain (dB)23RFHIC"s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC's E-phigh-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with 33 dBm OIP3 levels. The WL0510 is packaged in a hybrid surface mount (SMD), and no matching circuit required. The device is ideally suited for MILCOM and defense jammer applications. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
The RSP4459030-17A is designed for Communication system application frequencies from 4.4 ~ 5.9 GHz. This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and ...
Frequency4,400 ~ 5,900MHzGain13dBStatusProduction
Freq. (MHz)4,400 ~ 5,900
Gain (dB)13The RSP4459030-17A is designed for Communication system application frequencies from 4.4 ~ 5.9 GHz. This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and high efficiency. -
Description
RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a ...
Frequency20 ~ 520MHzOutput Power40.0WGain42dBStatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)42RFHIC's RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP03040-10 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant. -
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a ...
Frequency20 ~ 512MHzOutput Power40.0WGain44dBStatusProduction
Freq. (MHz)20 ~ 512
Gain (dB)44RFHIC's RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant. -
Description
RFHIC’s LCL3322-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 2700 to 3800 MHz, the LCL3322-L provides 21dB of gain and P1dB of 27dBm, while supporting ...
Frequency2,700 ~ 3,800MHzGain21dBStatusProduction
Freq. (MHz)2,700 ~ 3,800
Gain (dB)21RFHIC's LCL3322-L is an S-band LNA fabricated on RFHIC's GaAs p-high-electron-mobility (HEMT) process. Covering 2700 to 3800 MHz, the LCL3322-L provides 21dB of gain and P1dB of 27dBm, while supporting a noise figure of 1.4dB and OIP3 levels of 39 dBm. The LCL3322-L is packaged in a hybrid surface mount and does not require any matching circuit. This device has a high maximum input power of 18 dBm, and a single supply voltage of 5 V is required. The LCL3322-L's high performance and handling ease make it ideal for WiMAX, LTE, and radar applications. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s CL2102D-L is an S-band LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1750 to 2600 MHz, the CL2102D-L provides 14.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,750 ~ 2,600MHzGain15dBStatusProduction
Freq. (MHz)1,750 ~ 2,600
Gain (dB)15RFHIC's CL2102D-L is an S-band LNA fabricated on RFHIC's GaAs p-high-electron-mobility (HEMT) process. Covering 1750 to 2600 MHz, the CL2102D-L provides 14.5dB of gain and P1dB of 20dBm, while supporting a noise figure of 0.7dB and OIP3 levels of 33 dBm. The CL2102D-L is packaged in a hybrid surface mount and does not require any matching circuit. This device has a high maximum input power of 30 dBm, and a single supply voltage of 5 V is required. The CL2102D-L's high performance and handling ease make it ideal for WiMAX, LTE, and radar applications. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s CL1302D-L is an L-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 1200 to 1400 MHz, the CL1302D-L provides 18dB of gain and P1dB of 20dBm, while supporting ...
Frequency1,200 ~ 1,400MHzGain18dBStatusProduction
Freq. (MHz)1,200 ~ 1,400
Gain (dB)18RFHIC's CL1302D-L is an L-band low-noise-amplifier (LNA) fabricated on RFHIC's GaAs p-HEMT process. Covering 1200 to 1400 MHz, the CL1302D-L provides 18dB of gain and P1dB of 20dBm, while supporting a noise figure of 0.7dB and OIP3 levels of 33 dBm. The CL1302D-L is packaged in a hybrid surface mount and does not require any matching circuit. This device has a high maximum input power of 30 dBm, and a single supply voltage of 5 V is required. The CL1302D-L's high performance and handling ease make it ideal for WiMAX, LTE, and radar applications. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s CL3102D-L is an S-band low-noise-amplifier (LNA) fabricated on RFHIC’s GaAs p-HEMT process. Covering 2700 to 3500 MHz, the CL3102D-L provides 11.5dB of gain and P1dB of 20dBm, while supporting ...
Frequency2,700 ~ 3,500MHzGain12dBStatusProduction
Freq. (MHz)2,700 ~ 3,500
Gain (dB)12RFHIC's CL3102D-L is an S-band low-noise-amplifier (LNA) fabricated on RFHIC's GaAs p-HEMT process. Covering 2700 to 3500 MHz, the CL3102D-L provides 11.5dB of gain and P1dB of 20dBm, while supporting a noise figure of 1.1dB and OIP3 levels of 33 dBm. The CL3102D-L is packaged in a hybrid surface mount and does not require any matching circuit. This device has a high maximum input power of 30 dBm, and a single supply voltage of 5 V is required. The CL3102D-L's high performance and handling ease make it ideal for WiMAX, LTE, and radar applications. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RRM9395200-56 is a 200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 9300 to 9500 MHz, the RRM9395200-56 achieves 56 dB of gain with an ...
Frequency9,300 ~ 9,500MHzOutput Power200.0WGain56dBEfficiency20%StatusProduction
Freq. (MHz)9,300 ~ 9,500
Gain (dB)56RFHIC's RRM9395200-56 is a 200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 9300 to 9500 MHz, the RRM9395200-56 achieves 56 dB of gain with an efficiency of 20%. The RRM9395200-56 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RRP54591K3-43 is a C-band, gallium-nitride (GaN) Pulse amplifier designed for Radar system applications. The RRP54591K3-43 is operable from 5.4 to 5.9 GHz and has an output pulse power of ...
Frequency5,400 ~ 5,899MHzOutput Power1,200.0WGain43dBEfficiency35%StatusSample available
Freq. (MHz)5,400 ~ 5,899
Gain (dB)43RFHIC's RRP54591K3-43 is a C-band, gallium-nitride (GaN) Pulse amplifier designed for Radar system applications. The RRP54591K3-43 is operable from 5.4 to 5.9 GHz and has an output pulse power of 1200kW, with a duty cycle of 10%. The amplifier is fabricated using RFHIC's cutting edge gallium-nitride (GaN) high-electron-mobility (HEMT) technology, providing higher breakdown voltage, wider bandwidth, and high efficiency. Custom designs are available at the Module and Rack Mount System Level upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RWP03160-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a ...
Frequency20 ~ 500MHzOutput Power159.0WGain43dBStatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)43RFHIC's RWP03160-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a small signal gain of 43 dB with 54 dBm at OIP3. The RWP03160-10 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant. -
Description
RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
...Frequency20 ~ 510MHzGain41dBStatusSample available
Freq. (MHz)20 ~ 510
Gain (dB)41RFHIC's RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems. -
Description
RFHIC’s RNP24800-20 is a 800 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 53% and is capable of both CW ...
Frequency2,400 ~ 2,500MHzOutput Power800.0WGain45dBEfficiency53%StatusSample availableFreq. (MHz)2,400 ~ 2,500
Gain (dB)45RFHIC's RNP24800-20 is a 800 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 53% and is capable of both CW and pulsed operations. The RNP24800-20 is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24800-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RIM251K6-20 is a 1.6kW, gallium-nitride (GaN) solid-state module amplifier (SSPA) which operates from 2400 to 2500 MHz. It has a drain efficiency of 53% and is capable of both ...
Frequency2,400 ~ 2,500MHzOutput Power1,600.0WGain60dBEfficiency53%StatusSample available
Freq. (MHz)2,400 ~ 2,500
Gain (dB)60RFHIC's RIM251K6-20 is a 1.6kW, gallium-nitride (GaN) solid-state module amplifier (SSPA) which operates from 2400 to 2500 MHz. It has a drain efficiency of 53% and is capable of both CW and pulsed operations. The RIM251K6-20 is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RIM251K6-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RNP24550-21 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 55% and is capable of both CW ...
Frequency2,400 ~ 2,500MHzOutput Power550.0WGain43dBEfficiency55%StatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)43RFHIC's RNP24550-21 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 55% and is capable of both CW and pulsed operations. The RNP24550-21 is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24550-21 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RFM245-10 is a 100 W, RF CW gallium-nitride (GaN) solid-state power amplifier (SSPA)generator ideally designed for medical equipment applications. It has a drain efficiency of 37% and is capable ...
Frequency2,400 ~ 2,500MHzOutput Power100.0WEfficiency37%StatusSample available
Freq. (MHz)2,400 ~ 2,500RFHIC's RFM245-10 is a 100 W, RF CW gallium-nitride (GaN) solid-state power amplifier (SSPA)generator ideally designed for medical equipment applications. It has a drain efficiency of 37% and is capable of both CW and pulsed operations. This device comes with a signal attenuator and is fully matched to 50-Ohms. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RYP24200-20S is a 200 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW ...
Frequency2,400 ~ 2,500MHzOutput Power200.0WGain28dBEfficiency68%StatusSample available
Freq. (MHz)2,400 ~ 2,500
Gain (dB)28RFHIC's RYP24200-20S is a 200 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW and pulsed operations. The RYP24200-20S is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RYP24200-20S is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RCP25400-20L is a 400 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 63% and is capable of both CW ...
Frequency2,400 ~ 2,500MHzOutput Power400.0WGain13dBEfficiency63%StatusSample available
Freq. (MHz)2,400 ~ 2,500
Gain (dB)13RFHIC's RCP25400-20L is a 400 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RCP25400-20L is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RCP25400-20L is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RIM091K1-20 is a 1kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...
Frequency900 ~ 930MHzOutput Power1,100.0WGain50dBEfficiency63%StatusSample available
Freq. (MHz)900 ~ 930
Gain (dB)50RFHIC's RIM091K1-20 is a 1kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RIM091K1-20 is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RIM091K1-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RIM091K5-20 is a 1.5kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...
Frequency900 ~ 930MHzOutput Power1,500.0WGain50dBEfficiency63%StatusSample available
Freq. (MHz)900 ~ 930
Gain (dB)50RFHIC's RIM091K5-20 is a 1.5kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RIM091K5-20 is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP091K5-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RNP09550-20 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW ...
Frequency910 ~ 920MHzOutput Power550.0WGain60dBEfficiency66%StatusSample available
Freq. (MHz)910 ~ 920
Gain (dB)60RFHIC's RNP09550-20 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW and pulsed operations. The RNP09550-20 is equipped with RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT), providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP09550-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems. Custom designs are available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s RNP21040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 ...
Frequency2,100 ~ 2,170MHzOutput Power56.0WGain33dBStatusProduction
Freq. (MHz)2,100 ~ 2,170
Gain (dB)33RFHIC's RNP21040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 yields a small signal gain of 33 dB with 47.5 dBm at P3dB peak. The RNP21040-50 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant. -
Description
RFHIC’s RFW2500H10-28 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a ...
Frequency20 ~ 2,500MHzOutput Power4.0WGain17dBStatusProduction
Freq. (MHz)20 ~ 2,500
Gain (dB)17RFHIC's RFW2500H10-28 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a small signal gain of 17 dB with 36 dBm at P3dB. The RFW2500H10-28 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant. -
Description
RFHIC’s RWP03040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03040-50 yields a ...
Frequency20 ~ 500MHzOutput Power40.0WGain39dBStatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)39RFHIC's RWP03040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03040-50 yields a small signal gain of 39 dB with 46 dBm at P3dB. The RWP03040-50 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant. -
Description
RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a ...
Frequency20 ~ 1,000MHzOutput Power20.0WGain40dBStatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)40RFHIC's RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a small signal gain of 40 dB with 43 dBm at P3dB. The RWP05020-10 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant. -
Description
RFHIC’s TG520-10 is a gallium-nitride (GaN) hybrid power amplifier designed for defense communications and electronic warfare system applications. Covering from 30 to 520 MHz, the TG520-10 yields a high gain ...
Frequency30 ~ 520MHzOutput Power8.0WGain16dBStatusProduction
Freq. (MHz)30 ~ 520
Gain (dB)16RFHIC's TG520-10 is a gallium-nitride (GaN) hybrid power amplifier designed for defense communications and electronic warfare system applications. Covering from 30 to 520 MHz, the TG520-10 yields a high gain of 16 dB with 60 % efficiency at P3dB. The TG520-10 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) and is packaged in a hybrid surface mount (SMD) and attached to a copper sub-carrier. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s TG1000-10 is a gallium-nitride (GaN) hybrid power amplifier designed for Milcom and Electronic warfare systems applications. Covering from 100 to 1000 MHz, the TG1000-10 yields a high gain of ...
Frequency100 ~ 1,000MHzOutput Power6.0WGain15dBStatusProduction
Freq. (MHz)100 ~ 1,000
Gain (dB)15RFHIC's TG1000-10 is a gallium-nitride (GaN) hybrid power amplifier designed for Milcom and Electronic warfare systems applications. Covering from 100 to 1000 MHz, the TG1000-10 yields a high gain of 15 dB with 50 % efficiency at P3dB. The TG1000-10 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) and is packaged in a hybrid surface mount (SMD) and attached to a copper sub-carrier. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. Custom designs available upon request. Lead-free and RoHS compliant. -
Description
RFHIC’s TG2000-10 is a gallium-nitride (GaN) hybrid power amplifier designed for terrestrial trunked radio systems and base station system applications. Covering from 200 to 2000 MHz, the TG2000-10 yields a ...
Frequency200 ~ 2,000MHzOutput Power6.0WGain12dBStatusProduction
Freq. (MHz)200 ~ 2,000
Gain (dB)12RFHIC's TG2000-10 is a gallium-nitride (GaN) hybrid power amplifier designed for terrestrial trunked radio systems and base station system applications. Covering from 200 to 2000 MHz, the TG2000-10 yields a high gain of 12 dB with 50 % efficiency at P3dB. The TG2000-10 is designed using RFHIC's gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) and is packaged in a hybrid surface mount (SMD) and attached on a copper sub-carrier. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. Custom designs available upon request. Lead-free and RoHS compliant.
