4G LTE

  • ETQ2014P

    GaN on SiC Transistors

    ETQ2014P

    Description

    RFHIC’s ETQ2014P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3.2W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)3
    Gain (dB)19
  • DT12060P

    GaN on SiC Transistors

    DT12060P

    Description

    RFHIC’s DT12060P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    14.1W
    Gain
    17dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)14
    Gain (dB)17
  • IE36170WD

    GaN on SiC Transistors

    IE36170WD

    Description

    RFHIC’s IE36170WD is a discrete GaN on SiC HEMT which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,520 ~ 3,560MHz
    Output Power
    32.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)3,520 ~ 3,560
    Gain (dB)15
  • IE27385D

    GaN on SiC Transistors

    IE27385D

    Description

    RFHIC’s IE27385D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    69.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27330D

    GaN on SiC Transistors

    IE27330D

    Description

    RFHIC’s IE27330D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    63.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27275D

    GaN on SiC Transistors

    IE27275D

    Description

    RFHIC’s IE27275D is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    50.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE27220PE

    GaN on SiC Transistors

    IE27220PE

    Description

    RFHIC’s IE27220PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • IE27165PE

    GaN on SiC Transistors

    IE27165PE

    Description

    RFHIC’s IE27165PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    40.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6.3W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)19
  • IE26195WD

    GaN on SiC Transistors

    IE26195WD

    Description

    RFHIC’s IE26195WD is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    32.0W
    Gain
    14dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE26085P

    GaN on SiC Transistors

    IE26085P

    Description

    RFHIC’s IE26085P is a discrete GaN on SiC HEMT which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,496 ~ 2,690MHz
    Output Power
    19.0W
    Gain
    20dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,496 ~ 2,690
    Gain (dB)20
  • IE21385D

    GaN on SiC Transistors

    IE21385D

    Description

    RFHIC’s IE21385D is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    63.0W
    Gain
    15dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)15
  • IE23195WD

    GaN on SiC Transistors

    IE23195WD

    Description

    RFHIC’s IE23195WD is a discrete GaN on SiC HEMT which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,300 ~ 2,400MHz
    Output Power
    40.0W
    Gain
    15dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,300 ~ 2,400
    Gain (dB)15
  • IE21330P

    GaN on SiC Transistors

    IE21330P

    Description

    RFHIC’s IE21330P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    79.0W
    Gain
    16dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)16
  • IE21220P

    GaN on SiC Transistors

    IE21220P

    Description

    RFHIC’s IE21220P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    50.0W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)17
  • IE21165PE

    GaN on SiC Transistors

    IE21165PE

    Description

    RFHIC’s IE21165PE is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    37.0W
    Gain
    18dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE21110P

    GaN on SiC Transistors

    IE21110P

    Description

    RFHIC’s IE21110P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    25.0W
    Gain
    18dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE18250D

    GaN on SiC Transistors

    IE18250D

    Description

    RFHIC’s IE18250D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    45.0W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)17
  • IE18220PG

    GaN on SiC Transistors

    IE18220PG

    Description

    RFHIC’s IE18220PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18220PG delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    50.0W
    Gain
    18dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)18
  • IE19195WD

    GaN on SiC Transistors

    IE19195WD

    Description

    RFHIC’s IE19195WD is a discrete GaN on SiC HEMT which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,880 ~ 2,025MHz
    Output Power
    32.0W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)1,880 ~ 2,025
    Gain (dB)17
  • IE18330D

    GaN on SiC Transistors

    IE18330D

    Description

    RFHIC’s IE18330D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    63.0W
    Gain
    16dB
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)16
  • IE18330PG

    GaN on SiC Transistors

    IE18330PG

    Description

    RFHIC’s IE18330PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330PG delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    74.0W
    Gain
    16dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)16
  • IE18165P

    GaN on SiC Transistors

    IE18165P

    Description

    RFHIC’s IE18165P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    37.0W
    Gain
    18dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)18
  • IE08220P

    GaN on SiC Transistors

    IE08220P

    Description

    RFHIC’s IE08220P is a discrete GaN on SiC HEMT which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    758 ~ 858MHz
    Output Power
    50.0W
    Gain
    22dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)758 ~ 858
    Gain (dB)22
  • IE36085W

    GaN on SiC Transistors

    IE36085W

    Description

    RFHIC’s IE36085W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,400 ~ 3,600MHz
    Output Power
    19.0W
    Gain
    17dB
    Efficiency
    68%
    StatusProduction
    Freq. (MHz)3,400 ~ 3,600
    Gain (dB)17
  • IE27330P

    GaN on SiC Transistors

    IE27330P

    Description

    RFHIC’s IE27330P is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    79.0W
    Gain
    15dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)15
  • IE26110P

    GaN on SiC Transistors

    IE26110P

    Description

    RFHIC’s IE26110P is a discrete GaN on SiC HEMT which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,500 ~ 2,690MHz
    Output Power
    25.0W
    Gain
    19dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,500 ~ 2,690
    Gain (dB)19
  • IE21085P

    GaN on SiC Transistors

    IE21085P

    Description

    RFHIC’s IE21085P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    19.0W
    Gain
    21dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)21
  • IE36220W

    GaN on SiC Transistors

    IE36220W

    Description

    RFHIC’s IE36220W is a discrete GaN on SiC HEMT which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,480 ~ 3,520MHz
    Output Power
    50.0W
    Gain
    15dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)3,480 ~ 3,520
    Gain (dB)15
  • Description

    RFHIC’s RTH18008S-30 is a GaN hybrid Power Amplifier designed ideally for 4G LTE systems, small cells, and metro cell base station applications. Covering 1805 to 1880 MHz, the RTH18008S-30 provides ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    8.0W
    Gain
    32dB
    Efficiency
    45%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Pout (W)39
    Gain (dB)32
  • Description

    RFHIC’s RTH19008S-30 is a GaN hybrid Power Amplifier designed ideally for 4G LTE systems, small cells, and metro cell base station applications. Covering 1930 to 1995 MHz, the RTH19008S-30 provides ...

    Frequency
    1,930 ~ 1,995MHz
    Output Power
    8.0W
    Gain
    32dB
    Efficiency
    45%
    StatusProduction
    Freq. (MHz)1,930 ~ 1,995
    Pout (W)39
    Gain (dB)32
  • Description

    RFHIC’s RTH21008S-30 is a GaN hybrid Power Amplifier designed ideally for 4G LTE systems, small cells, and metro cell base station applications. Covering 2110 to 2180 MHz, the RTH21008S-30 provides ...

    Frequency
    2,110 ~ 2,180MHz
    Output Power
    8.0W
    Gain
    30dB
    Efficiency
    45%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,180
    Pout (W)39
    Gain (dB)30
  • Description

    RFHIC’s RTH26008S-30 is a GaN hybrid Power Amplifier designed ideally for 4G LTE systems, small cells, and metro cell base station applications. Covering 2620 to 2690 MHz, the RTH26008S-30 provides ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    8.0W
    Gain
    29dB
    Efficiency
    45%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Pout (W)39
    Gain (dB)29
  • Description

    RFHIC’s RTH36004N-24 is a GaN hybrid Power Amplifier designed ideally for 4G LTE repeaters, RF sub-systems and metro cell base station applications. Covering 3550 to 3700 MHz, the RTH36004N-24 provides ...

    Frequency
    3,550 ~ 3,700MHz
    Output Power
    4.0W
    Gain
    27dB
    Efficiency
    38%
    StatusProduction
    Freq. (MHz)3,550 ~ 3,700
    Pout (W)36
    Gain (dB)27
  • RT12055P

    GaN on SiC Transistors

    RT12055P

    Description

    RFHIC’s RT12055P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12055P delivers 55 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    12.6W
    Gain
    16dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • IE08165P

    GaN on SiC Transistors

    IE08165P

    Description

    RFHIC’s IE08165P is a discrete GaN on SiC HEMT which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    770 ~ 900MHz
    Output Power
    37.0W
    Gain
    21dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)770 ~ 900
    Gain (dB)21
  • IE36110W

    GaN on SiC Transistors

    IE36110W

    Description

    RFHIC’s IE36110W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,400 ~ 3,600MHz
    Output Power
    25.0W
    Gain
    17dB
    Efficiency
    65%
    StatusProduction
    Freq. (MHz)3,400 ~ 3,600
    Gain (dB)17
  • Category