5G

  • ETQ2014P

    GaN on SiC Transistors

    ETQ2014P

    Description

    RFHIC’s ETQ2014P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3.2W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)3
    Gain (dB)19
  • DT12060P

    GaN on SiC Transistors

    DT12060P

    Description

    RFHIC’s DT12060P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    14.1W
    Gain
    17dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Pout (W)14
    Gain (dB)17
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6.3W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)19
  • IE18165P

    GaN on SiC Transistors

    IE18165P

    Description

    RFHIC’s IE18165P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    37.0W
    Gain
    18dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)18
  • IE18085P

    GaN on SiC Transistors

    IE18085P

    Description

    RFHIC’s IE18085P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    19.0W
    Gain
    19dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)19
  • IE08220P

    GaN on SiC Transistors

    IE08220P

    Description

    RFHIC’s IE08220P is a discrete GaN on SiC HEMT which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    758 ~ 858MHz
    Output Power
    50.0W
    Gain
    22dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)758 ~ 858
    Gain (dB)22
  • IE08165P

    GaN on SiC Transistors

    IE08165P

    Description

    RFHIC’s IE08165P is a discrete GaN on SiC HEMT which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    770 ~ 900MHz
    Output Power
    37.0W
    Gain
    21dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)770 ~ 900
    Gain (dB)21
  • Category