Linear Accelerators

  • RIK1330K-40TG

    RF & Microwave Generators

    RIK1330K-40TG

    Description

    The RIK1330K-40TG is a 30kW, GaN solid-state microwave generator designed ideally for high-power linear accelerator applications. The RIK1330K-40TG is operable from 900 to 930 MHz and provides a ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    30,000.0W
    Gain
    dB
    Efficiency
    53%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)
  • Description

    RFHIC’s RIM132K0-20 is a 2kW gallium-nitride (GaN) SiC solid-state power amplifier designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. Fabricated with RFHIC’s state of the ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    2,000.0W
    Gain
    dB
    Efficiency
    65%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)
  • Description

    The RNP58200-10 uses GaN on SiC HEMT technology which performs high breakdown voltage and high efficiency.
    This product is able to control its RF power and monitoring FWD and RVS ...

    Frequency
    5,725 ~ 5,873MHz
    Output Power
    200.0W
    Gain
    40dB
    Efficiency
    35%
    StatusSample available
    Freq. (MHz)5,725 ~ 5,873
    Gain (dB)40
  • RIU093K0-40TG

    RF & Microwave Generators

    RIU093K0-40TG

    Description

    RFHIC’s RIU093K0-40TG is a 3kW GaN solid-state microwave generator ideally designed for industrial heating, drying, sterilizing, and polymer modification applications. The RIU093K0-40TG is built with RFHIC’s cutting-edge gallium-nitride (GaN) on ...

    Frequency
    900 ~ 930MHz
    Output Power
    3,000.0W
    Gain
    dB
    Efficiency
    60%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)
  • Description

    The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    1,600.0W
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
  • RIK2520K-40TG

    RF & Microwave Generators

    RIK2520K-40TG

    Description

    RFHIC’s RIK2520K-40TG is a 20kW, GaN solid state microwave generator designed for industrial microwave drying, heating, and plasma generating applications. The RIK2520K-40TG is an integrated type microwave generator equipped with ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    20,000.0W
    Gain
    dB
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • RIK0915K-40TG

    RF & Microwave Generators

    RIK0915K-40TG

    Description

    RFHIC’s RIK0915K-40TG is a 15kW, gallium-nitride (GaN) solid-state microwave generator operable from 900-930 MHz. The RIK0915K-40TG provides a system efficiency of 60% and is capable of both CW and pulsed ...

    Frequency
    900 ~ 930MHz
    Output Power
    15,000.0W
    Gain
    dB
    Efficiency
    56%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)
  • RIK0930K-40TG

    RF & Microwave Generators

    RIK0930K-40TG

    Description

    RFHIC’s RIK0930K-40TG is a 30 kW, gallium-nitride (GaN) solid-state microwave generator operating from 900 ~ 930 MHz. It has a system efficiency of 56% and is capable of both CW ...

    Frequency
    900 ~ 930MHz
    Output Power
    30,000.0W
    Gain
    dB
    Efficiency
    56%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)
  • IE05600DC

    GaN on SiC Transistors

    IE05600DC

    Description

    The 580W CW RF Power Transistor is designed for particle accelerator and microwave energy applications at 500MHz. This device is suitable for use in CW, pulse and linear applications. This ...

    Frequency
    499 ~ 501MHz
    Output Power
    580.0W
    Efficiency
    75%
    StatusSample available
    Freq. (MHz)499 ~ 501
  • IE13550D

    GaN on SiC Transistors

    IE13550D

    Description

    RFHIC’s IE13550D is a 550W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    550.0W
    Gain
    15dB
    Efficiency
    79%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)15
  • Category