Microwave Heating and Drying

  • RIK1330K-40TG

    RF & Microwave Generators

    RIK1330K-40TG

    Description

    The RIK1330K-40TG is a 30kW, GaN solid-state microwave generator designed ideally for high-power linear accelerator applications. The RIK1330K-40TG is operable from 900 to 930 MHz and provides a ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    30,000.0W
    Gain
    dB
    Efficiency
    53%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)
  • Description

    RFHIC’s RIM132K0-20 is a 2kW gallium-nitride (GaN) SiC solid-state power amplifier designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. Fabricated with RFHIC’s state of the ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    2,000.0W
    Gain
    dB
    Efficiency
    65%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)
  • RIM25200-20G

    RF & Microwave Generators

    RIM25200-20G

    Description

    RFHIC’s RIM25200-20G is a 200W, GaN solid-state microwave generator designed ideally for microwave ablation (tumor, cardiac, tissue, liver), microwave diathermy, and plasma lighting applications. The RIM25200-20G is equipped with RFHIC’s ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    Gain
    dB
    Efficiency
    60%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • RIM25100-20G

    RF & Microwave Generators

    RIM25100-20G

    Description

    RFHIC’s RIM25100-20G is a 100W, GaN solid-state microwave generator designed ideally for microwave ablation (tumor, liver, cardiac, tissue) and microwave diathermy applications. The RIM25100-20G is built with RFHIC’s cutting-edge gallium-nitride ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Gain
    dB
    Efficiency
    60%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • Description

    The RNP58200-10 uses GaN on SiC HEMT technology which performs high breakdown voltage and high efficiency.
    This product is able to control its RF power and monitoring FWD and RVS ...

    Frequency
    5,725 ~ 5,873MHz
    Output Power
    200.0W
    Gain
    40dB
    Efficiency
    35%
    StatusSample available
    Freq. (MHz)5,725 ~ 5,873
    Gain (dB)40
  • RIU093K0-40TG

    RF & Microwave Generators

    RIU093K0-40TG

    Description

    RFHIC’s RIU093K0-40TG is a 3kW GaN solid-state microwave generator ideally designed for industrial heating, drying, sterilizing, and polymer modification applications. The RIU093K0-40TG is built with RFHIC’s cutting-edge gallium-nitride (GaN) on ...

    Frequency
    900 ~ 930MHz
    Output Power
    3,000.0W
    Gain
    dB
    Efficiency
    60%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)
  • RIF58800-20SG

    RF & Microwave Generators

    RIF58800-20SG

    Description

    RFHIC’s RIF58800-20SG is an 800W, GaN solid-state microwave generator designed ideally for microwave flash welding, industrial food processing (drying, heating, frying) polymer modification applications. The RIF58800-20SG is a shelf-type microwave ...

    Frequency
    5,725 ~ 5,875MHz
    Output Power
    800.0W
    Gain
    dB
    Efficiency
    32%
    StatusSample available
    Freq. (MHz)5,725 ~ 5,875
    Gain (dB)
  • RIM251K6-20G

    RF & Microwave Generators

    RIM251K6-20G

    Description

    The RIM251K6-20G is a 1600W gallium-nitride (GaN) solid-state microwave generator operable from 2400 to 2500 MHz. The RIM251K6-20G is designed for microwave sterilization, food irradiation, powder metallurgy processing, microwave sintering, ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    1,600.0W
    Gain
    dB
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • Description

    The RIM251K6-20 is a 1.6kW gallium-nitride (GaN) solid-state power amplifier (SSPA) designed for high-power industrial, scientific, and medical applications. (Microwave irradiation, sterilization, microwave sintering, microwave cladding, microwave joining, powder metallurgy). ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    1,600.0W
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
  • Description

    RFHIC’s RIM09800-20 is an 800W, GaN solid-state power amplifier designed ideally as the building block for high-power microwave heating and drying applications. The RIM09800-20 is fabricated using RFHIC’s state-of-the-art gallium-nitride ...

    Frequency
    900 ~ 930MHz
    Output Power
    800.0W
    Gain
    dB
    Efficiency
    65%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)
  • RIU256K0-40TG

    RF & Microwave Generators

    RIU256K0-40TG

    Description

    RFHIC’s RIU256K0-40TG is a 6kW, GaN solid state microwave generator designed ideally for high-power plasma generating applications including CVD reactors for artificial diamond growth, PVD thin film deposition equipment for ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    6,000.0W
    Gain
    dB
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • RIU243K0-40TG

    RF & Microwave Generators

    RIU243K0-40TG

    Description

    RFHIC’s RIU243K0-40TG is a 3kW, solid-state microwave generator designed for microwave heating and plasma generation applications. The RIU243K0-40TG is built with RFHIC’s state-of-the-art gallium-nitride (GaN) on SiC technology and is ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    3,000.0W
    Gain
    dB
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • RIK2512K-40TG

    RF & Microwave Generators

    RIK2512K-40TG

    Description

    RFHIC’s RIK2512K-40TG is a 12kW, solid-state microwave generator system designed for plasma generation and microwave heating applications. The RIK2512K-40TG is built using RFHIC’s cutting edge gallium-nitride (GaN) on SiC HEMT ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    12,000.0W
    Gain
    dB
    Efficiency
    54%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • Description

    RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors i designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This ...

    Frequency
    900 ~ 930MHz
    Output Power
    2,000.0W
    Gain
    56dB
    Efficiency
    63%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)56
  • RIK2520K-40TG

    RF & Microwave Generators

    RIK2520K-40TG

    Description

    RFHIC’s RIK2520K-40TG is a 20kW, GaN solid state microwave generator designed for industrial microwave drying, heating, and plasma generating applications. The RIK2520K-40TG is an integrated type microwave generator equipped with ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    20,000.0W
    Gain
    dB
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)
  • RIK0915K-40TG

    RF & Microwave Generators

    RIK0915K-40TG

    Description

    RFHIC’s RIK0915K-40TG is a 15kW, gallium-nitride (GaN) solid-state microwave generator operable from 900-930 MHz. The RIK0915K-40TG provides a system efficiency of 60% and is capable of both CW and pulsed ...

    Frequency
    900 ~ 930MHz
    Output Power
    15,000.0W
    Gain
    dB
    Efficiency
    56%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)
  • RIK0930K-40TG

    RF & Microwave Generators

    RIK0930K-40TG

    Description

    RFHIC’s RIK0930K-40TG is a 30 kW, gallium-nitride (GaN) solid-state microwave generator operating from 900 ~ 930 MHz. It has a system efficiency of 56% and is capable of both CW ...

    Frequency
    900 ~ 930MHz
    Output Power
    30,000.0W
    Gain
    dB
    Efficiency
    56%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)
  • Description

    RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a ...

    Frequency
    20 ~ 520MHz
    Output Power
    40.0W
    Gain
    42dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 520
    Gain (dB)42
  • Description

    RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a ...

    Frequency
    20 ~ 512MHz
    Output Power
    40.0W
    Gain
    44dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 512
    Gain (dB)44
  • Description

    RFHIC’s RIM251K6-20 is a 1.6kW, gallium-nitride (GaN) solid-state module amplifier (SSPA) which operates from 2400 to 2500 MHz. It has an amplifier efficiency of 55% and is capable of both ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    1,600.0W
    Gain
    60dB
    Efficiency
    55%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)60
  • Description

    RFHIC’s RNP24550-21 is a 550 W, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 55% and is capable of both CW ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    550.0W
    Gain
    43dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)43
  • Description

    RFHIC’s RIM091K1-20 is a 1kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 910-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...

    Frequency
    900 ~ 930MHz
    Output Power
    1,100.0W
    Gain
    50dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)50
  • Description

    RFHIC’s RIM091K5-20 is a 1.5kW, gallium-nitride (GaN) solid-state power amplifier (SSPA) which operates from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and ...

    Frequency
    900 ~ 930MHz
    Output Power
    1,500.0W
    Gain
    50dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)50
  • IE24300P

    GaN on SiC Transistors

    IE24300P

    Description

    RFHIC’s IE24300P is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    300.0W
    Gain
    11dB
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)11
  • IE24150P

    GaN on SiC Transistors

    IE24150P

    Description

    RFHIC’s IE24150P is a 150W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    150.0W
    Gain
    13dB
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)13
  • IE24200P

    GaN on SiC Transistors

    IE24200P

    Description

    RFHIC’s IE24200P is a 200W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
  • IE24100P

    GaN on SiC Transistors

    IE24100P

    Description

    RFHIC’s IE24100P is a 100W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor fabricated with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology. Operating from 2400 to 2500 MHz, ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)15
  • IE09150PC

    GaN on SiC Transistors

    IE09150PC

    Description

    RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an ...

    Frequency
    900 ~ 930MHz
    Output Power
    150.0W
    Gain
    18dB
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • IE09300PC

    GaN on SiC Transistors

    IE09300PC

    Description

    RFHIC’s IE09300PC is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the ...

    Frequency
    900 ~ 930MHz
    Output Power
    300.0W
    Gain
    18dB
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • ET43028P

    GaN on SiC Transistors

    ET43028P

    Description

    RFHIC’s ET43028P is a 34W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    34.0W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)15
  • ET43055P

    GaN on SiC Transistors

    ET43055P

    Description

    RFHIC’s ET43055P is a 70W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    70.0W
    Gain
    13dB
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)13
  • ET43014P

    GaN on SiC Transistors

    ET43014P

    Description

    RFHIC’s ET43014P is an 18W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    18.0W
    Gain
    16dB
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • Description

    RFHIC’s RNP21040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 ...

    Frequency
    2,100 ~ 2,170MHz
    Output Power
    56.0W
    Gain
    33dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)2,100 ~ 2,170
    Gain (dB)33
  • Description

    RFHIC’s RFW2500H10-28 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a ...

    Frequency
    20 ~ 2,500MHz
    Output Power
    4.0W
    Gain
    17dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 2,500
    Gain (dB)17
  • Description

    RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a ...

    Frequency
    20 ~ 1,000MHz
    Output Power
    20.0W
    Gain
    40dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 1,000
    Gain (dB)40
  • Description

    RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a ...

    Frequency
    20 ~ 512MHz
    Output Power
    80.0W
    Gain
    38dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 512
    Gain (dB)38
  • Description

    RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a ...

    Frequency
    20 ~ 1,000MHz
    Output Power
    40.0W
    Gain
    38dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)20 ~ 1,000
    Gain (dB)38
  • Description

    RFHIC’s RWP06040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 450 to 880 MHz, the RWP06040-10 yields a ...

    Frequency
    450 ~ 880MHz
    Output Power
    32.0W
    Gain
    40dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)450 ~ 880
    Gain (dB)40
  • Description

    RFHIC’s RWP06040-60 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 1000 MHz, the RWP06040-60 yields a ...

    Frequency
    500 ~ 1,000MHz
    Output Power
    40.0W
    Gain
    42dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)500 ~ 1,000
    Gain (dB)42
  • Description

    RFHIC’s RWP15040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 2500 MHz, the RWP15040-10 yields a ...

    Frequency
    500 ~ 2,500MHz
    Output Power
    50.0W
    Gain
    38dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)500 ~ 2,500
    Gain (dB)38
  • Description

    RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a ...

    Frequency
    700 ~ 2,700MHz
    Output Power
    100.0W
    Gain
    53dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)700 ~ 2,700
    Gain (dB)53
  • Description

    RFHIC’s RWP17050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP17050-10 yields a ...

    Frequency
    700 ~ 2,700MHz
    Output Power
    50.0W
    Gain
    37dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)700 ~ 2,700
    Gain (dB)37
  • Description

    RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a ...

    Frequency
    1,000 ~ 3,000MHz
    Output Power
    50.0W
    Gain
    38dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)1,000 ~ 3,000
    Gain (dB)38
  • Description

    RFHIC’s RWP15020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 2000 MHz, the RWP15020-50 yields a ...

    Frequency
    1,000 ~ 2,000MHz
    Output Power
    W
    Gain
    29dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)1,000 ~ 2,000
    Gain (dB)29
  • Description

    RFHIC’s RNP19040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose applications. Covering from 1800 to 1900 MHz, the RNP19040-50 yields ...

    Frequency
    1,800 ~ 1,900MHz
    Output Power
    56.0W
    Gain
    33dB
    StatusProduction
    Freq. (MHz)1,800 ~ 1,900
    Gain (dB)33
  • Description

    RFHIC’s RUM15040-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for communication and RF amplifier system applications. Covering from 500 to 2500 MHz, the RUM15040-20 yields ...

    Frequency
    500 ~ 2,500MHz
    Output Power
    40.0W
    Gain
    56dB
    StatusProduction
    Freq. (MHz)500 ~ 2,500
    Gain (dB)56
  • Description

    RFHIC’s RTP1623050-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1600 to 2300 MHz, the RTP1623050-20 yields a ...

    Frequency
    1,600 ~ 2,300MHz
    Output Power
    251.0W
    Gain
    10dB
    StatusProduction
    Freq. (MHz)1,600 ~ 2,300
    Gain (dB)10
  • Description

    RFHIC’s RUM43020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 6000 MHz, the RUM43020-10 yields a ...

    Frequency
    2,000 ~ 6,000MHz
    Output Power
    20.0W
    Gain
    35dB
    Efficiency
    %
    StatusProduction
    Freq. (MHz)2,000 ~ 6,000
    Gain (dB)35
  • Category