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Description
RFHIC”s WL2215-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2215-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzGain15dBStatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
RFHIC”s WL2208-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2208-L yields a high gain of 15 with ...
Frequency50 ~ 2,200MHzGain15dBStatusProduction
Freq. (MHz)50 ~ 2,200
Gain (dB)15 -
Description
RFHIC”s WL1008-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1008-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzGain16dBStatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WL1015-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1015-L yields a high gain of 16 with ...
Frequency50 ~ 1,000MHzGain16dBStatusProduction
Freq. (MHz)50 ~ 1,000
Gain (dB)16 -
Description
RFHIC”s WLP0640 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 20 to 520 MHz, the WLP0640 yields a high gain of 19.5 with ...
Frequency20 ~ 520MHzGain20dBStatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)20 -
Description
RFHIC”s WL2205-L is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 30 to 2200 MHz the WL2205-L yields a high gain of 15.5 with ...
Frequency30 ~ 2,200MHzGain16dBStatusProduction
Freq. (MHz)30 ~ 2,200
Gain (dB)16 -
Description
RFHIC”s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-phigh-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510 yields a high gain of 23 with ...
Frequency1 ~ 520MHzGain23dBStatusProduction
Freq. (MHz)1 ~ 520
Gain (dB)23 -
Description
The RSP4459030-17A is designed for Communication system application frequencies from 4.4 ~ 5.9 GHz. This module uses gallium-nitride (GaN) high-electron-mobility (HEMT) technology which performs high breakdown voltage, wide bandwidth and ...
Frequency4,400 ~ 5,900MHzGain13dBStatusProduction
Freq. (MHz)4,400 ~ 5,900
Gain (dB)13 -
Description
RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a ...
Frequency20 ~ 520MHzOutput Power40.0WGain42dBStatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)42 -
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a ...
Frequency20 ~ 512MHzOutput Power40.0WGain44dBStatusProduction
Freq. (MHz)20 ~ 512
Gain (dB)44 -
Description
RFHIC’s RWP03160-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a ...
Frequency20 ~ 500MHzOutput Power159.0WGain43dBStatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)43 -
Description
RFHIC’s RNP21040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 ...
Frequency2,100 ~ 2,170MHzOutput Power56.0WGain33dBStatusProduction
Freq. (MHz)2,100 ~ 2,170
Gain (dB)33 -
Description
RFHIC’s RFW2500H10-28 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a ...
Frequency20 ~ 2,500MHzOutput Power4.0WGain17dBStatusProduction
Freq. (MHz)20 ~ 2,500
Gain (dB)17 -
Description
RFHIC’s RWP03040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03040-50 yields a ...
Frequency20 ~ 500MHzOutput Power40.0WGain39dBStatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)39 -
Description
RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a ...
Frequency20 ~ 1,000MHzOutput Power20.0WGain40dBStatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)40 -
Description
RFHIC’s TG520-10 is a gallium-nitride (GaN) hybrid power amplifier designed for defense communications and electronic warfare system applications. Covering from 30 to 520 MHz, the TG520-10 yields a high gain ...
Frequency30 ~ 520MHzOutput Power8.0WGain16dBStatusProduction
Freq. (MHz)30 ~ 520
Gain (dB)16 -
Description
RFHIC’s TG1000-10 is a gallium-nitride (GaN) hybrid power amplifier designed for Milcom and Electronic warfare systems applications. Covering from 100 to 1000 MHz, the TG1000-10 yields a high gain of ...
Frequency100 ~ 1,000MHzOutput Power6.0WGain15dBStatusProduction
Freq. (MHz)100 ~ 1,000
Gain (dB)15 -
Description
RFHIC’s HM0220-05A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for military radio, wideband receivers, and EW jammer applications. Covering from 200 to 2000 MHz, the HM0220-05A yields a ...
Frequency200 ~ 2,000MHzOutput Power5.0WGain35dBStatusProduction
Freq. (MHz)200 ~ 2,000
Pout (W)5
Gain (dB)35 -
Description
RFHIC’s HM0225-05B is a gallium-nitride (GaN) hybrid power amplifier ideally suited for military radio, wideband receiver, and EW jammer applications. Covering from 200 to 2500 MHz, the HM0225-05B yields a ...
Frequency200 ~ 2,500MHzOutput Power5.0WGain34dBStatusProduction
Freq. (MHz)200 ~ 2,500
Pout (W)5
Gain (dB)34 -
Description
RFHIC’s HM0005-10A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for military radio systems, wideband receiver, and EW jammer applications. Covering from 20 to 520 MHz, the HM0005-10A yields ...
Frequency20 ~ 520MHzOutput Power10.0WGain30dBStatusProduction
Freq. (MHz)20 ~ 520
Pout (W)10
Gain (dB)30 -
Description
RFHIC’s HM0525-10A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for military radio, wideband receiver, and EW jammer applications. Covering from 500 to 2500 MHz, the HM0525-10A yields a ...
Frequency500 ~ 2,500MHzOutput Power10.0WGain20dBStatusProduction
Freq. (MHz)500 ~ 2,500
Pout (W)10
Gain (dB)20 -
Description
RFHIC’s HM2060-10A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for military radio, wideband receiver, and EW jammer applications. Covering from 2000 to 6000 MHz, the HM2060-10A yields a ...
Frequency2,000 ~ 6,000MHzOutput Power10.0WGain16dBStatusProduction
Freq. (MHz)2,000 ~ 6,000
Gain (dB)16 -
Description
RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a ...
Frequency20 ~ 512MHzOutput Power80.0WGain38dBStatusProduction
Freq. (MHz)20 ~ 512
Gain (dB)38 -
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a ...
Frequency20 ~ 1,000MHzOutput Power40.0WGain38dBStatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)38 -
Description
RFHIC’s RWP06040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 450 to 880 MHz, the RWP06040-10 yields a ...
Frequency450 ~ 880MHzOutput Power32.0WGain40dBStatusProduction
Freq. (MHz)450 ~ 880
Gain (dB)40 -
Description
RFHIC’s RWP06040-60 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 1000 MHz, the RWP06040-60 yields a ...
Frequency500 ~ 1,000MHzOutput Power40.0WGain42dBStatusProduction
Freq. (MHz)500 ~ 1,000
Gain (dB)42 -
Description
RFHIC’s RWP15040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 2500 MHz, the RWP15040-10 yields a ...
Frequency500 ~ 2,500MHzOutput Power50.0WGain38dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)38 -
Description
RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a ...
Frequency700 ~ 2,700MHzOutput Power100.0WGain53dBStatusProduction
Freq. (MHz)700 ~ 2,700
Gain (dB)53 -
Description
RFHIC’s RWP17050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP17050-10 yields a ...
Frequency700 ~ 2,700MHzOutput Power50.0WGain37dBStatusProduction
Freq. (MHz)700 ~ 2,700
Gain (dB)37 -
Description
RFHIC’s RWP20050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a ...
Frequency1,000 ~ 3,000MHzOutput Power50.0WGain38dBStatusProduction
Freq. (MHz)1,000 ~ 3,000
Gain (dB)38 -
Description
RFHIC’s RWP15020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 2000 MHz, the RWP15020-50 yields a ...
Frequency1,000 ~ 2,000MHzOutput Power20.0WGain29dBStatusProduction
Freq. (MHz)1,000 ~ 2,000
Gain (dB)29 -
Description
RFHIC’s RNP19040-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) narrow band high power amplifier suited for general purpose applications. Covering from 1800 to 1900 MHz, the RNP19040-50 yields ...
Frequency1,800 ~ 1,900MHzOutput Power56.0WGain33dBStatusProduction
Freq. (MHz)1,800 ~ 1,900
Gain (dB)33 -
Description
RFHIC’s RUM15040-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for communication and RF amplifier system applications. Covering from 500 to 2500 MHz, the RUM15040-20 yields ...
Frequency500 ~ 2,500MHzOutput Power40.0WGain56dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)56 -
Description
RFHIC’s RTP1623050-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1600 to 2300 MHz, the RTP1623050-20 yields a ...
Frequency1,600 ~ 2,300MHzOutput Power251.0WGain10dBStatusProduction
Freq. (MHz)1,600 ~ 2,300
Gain (dB)10 -
Description
RFHIC’s RUM43020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 6000 MHz, the RUM43020-10 yields a ...
Frequency2,000 ~ 6,000MHzOutput Power20.0WGain35dBStatusProduction
Freq. (MHz)2,000 ~ 6,000
Gain (dB)35 -
Description
RFHIC’s RWP25020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 3000 MHz, the RWP25020-50 yields a ...
Frequency2,000 ~ 3,000MHzOutput Power25.0WGain25dBStatusProduction
Freq. (MHz)2,000 ~ 3,000
Gain (dB)25
