RFHIC’s ID38461DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 3980 MHz. The ID38461DR delivers 447 W of saturated power at 48V.

The ID38461DR can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

Lead-free and RoHS compliant.