RFHIC’s RFDFE is a gallium-nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR systems and 4G LTE systems. Covering 3440 to 3520 MHz, the RFDFE provides an output power of 3.7W with high efficiency of 39.5%. The RFDFE is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RFDFE is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 3.7W average power. The RFDFE is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. Custom designs are available upon request.
This device is lead-free and RoHS compliant.